Kroemer, Herbert 1928-
Most widely held works about Herbert Kroemer
Most widely held works by Herbert Kroemer
Thermal physics by Charles Kittel ( Book )
16 editions published between 1980 and 2003 in 3 languages and held by 894 libraries worldwide
Quantum mechanics : for engineering, materials science, and applied physics by Herbert Kroemer ( Book )
4 editions published in 1994 in English and held by 221 libraries worldwide
Selected works of Professor Herbert Kroemer by Herbert Kroemer ( Book )
3 editions published in 2008 in English and held by 51 libraries worldwide
Physik der Wärme mit 23 Tabellen und 140 Aufgaben by Charles Kittel ( Book )
1 edition published in 1993 in German and held by 32 libraries worldwide
Physik der Wärme : mit 23 Tabellen by Charles Kittel ( Book )
1 edition published in 1993 in German and held by 6 libraries worldwide
Instructor's guide for thermal physics by Charles Kittel ( Book )
2 editions published in 1980 in Undetermined and English and held by 5 libraries worldwide
Thermal physics ( Book )
2 editions published between 1980 and 2000 in English and held by 4 libraries worldwide
Instructor's guide for thermal physics ( Book )
1 edition published in 1980 in English and held by 2 libraries worldwide
Einzelkornsägeräte für Gemüse, Bauarten und Typentabellen : Pflanzliche Produktion : Gartenbau : Maschinen und Geräte für den Anbau im Freiland by H Hege ( Book )
1 edition published in 1991 in German and held by 2 libraries worldwide
Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic ( Book )
3 editions published between 1986 and 1987 in English and held by 1 library worldwide
The following describes the results of research on III-V molecular beam epitaxial (MBE) growth, material characterization and the fabrication of heterostructure bipolar transistors (HBT) for very-high-speed logic applications. Work on the InGaP/GaAs heterojunction (HJ) was completed. Isotype HJs were grown and evaluated by a CV reconstruction method in order to determine the energy band offsets. It was found that delta Ec = 0.22 eV and delta Ev = 0.24 eV for the lattice matched composition. An inverted AlGaAs/GaAs HBT was investigated, and it was shown that an undoped, graded region between emitter and base would eliminate the conduction band spike and provide a buffer for Be diffusion. A new direction toward improvement in performance and fabrication techniques for the AlGaAs/GaAs HBT was successfully demonstrated. Graded-bandgap nonalloyed ohmic contacts using n+ InAs for the AlGaAs emitter and p+ GaSb for the GaAs base were provided by selective epitaxial regrowth. The MBE growth conditions for grading from GaAs to InAs and GaAs to GaSb were determined. Low specific contact resistances were observed for both contact types. A self-aligned AlGaAs/GaAs HBT with graded-gap contacts to both base and emitter was demonstrated.
Theory of Heterojunction Discontinuities ( Book )
2 editions published between 1976 and 1978 in English and held by 1 library worldwide
Earlier self-consistent pseudopotential calculations of heterojunction band lineups were refined. A rational electrostatic potential matching scheme was developed, involving the mean interstitial potential of the two semiconductors, shifted by a dipole contribution calculable from electronegativity data. A model for small crystallographic anisotropics is described. (Author).
Nanostructures for Enhanced Electron/Hole Conversion ( Book )
1 edition published in 2009 in English and held by 1 library worldwide
In this program we used molecular beam epitaxy (MBE) to create epitaxial metal-semiconductor structures containing embedded metallic nanoparticles, metallic epitaxial films and epitaxial metal-semiconductor junctions. We incorporated epitaxial metallic nanoparticles of erbium arsenide and erbium antimonide in GaAs, InOaAs and GaSb structures by molecular beam epitaxy. The metallic nanoparticles in semiconductors produced: (1) electrical doping of semiconductors, (2) electron/hole recombination enhancement, (3) electron/hole tunnel junction enhancement. (4) thermal conductivity control, (5) microwave rectification improvement and (6) strong electron plasma resonances. Tunnel currents of GaAs np junctions were enhanced by up to five orders of magnitude by the embedded nanoparticles. Electron-hole recombination times in a series of ErAs/InGaAs codepositions were reduced to less than 100 femtoseconds. We produced the first epitaxial growth of GdN on GaN. This research thus established a foundation for development of improved artificially structured thermoelectric power generation materials, for new materials for terahertz wave generation and detection and for development of highly conducting contacts for the nitride semiconductors.
Molecular Beam Epitaxial Growth and Electronic Properties of GaP-on-Si (211) Heterostructures, and of Related Systems ( Book )
1 edition published in 1990 in English and held by 1 library worldwide
Two fundamental problems involved in the hetero-epitaxial growth of GaAs on substrates were investigated: a) The mechanism by which antiphase domain disorder is self-eliminating under proper growth conditions. b) The minimization of misfit-induced threading dislocations, and the properties of those dislocations that remain, especially their interactions with superlattice buffer layers. Although the self-elimination of antiphase domain disorder under proper growth conditions is experimentally beyond the shadow of a doubt, no truly satisfactory explanation for this phenomenon has been found. We propose that the self-elimination is of kinetic rather than energetic origin, and that the details of the annihilation mechanism depend sensitively on details in the kinetics. Superlattice buffer layers are only marginally effective in reducing threading dislocation densities of the magnitude occuring in GaAs-on-Si growth, and they are unable to reduce the densities to anywhere near the levels desirable for the more demanding device applications, such as lasers. A truly satisfactory level of dislocation reduction will probably require island-like growth on patterned substrates. Threading dislocations interact strongly with superlattice. The effect was traced to a reduction in the mobility of the minority carrier along the superlattice wells, presumably caused by dislocation- induced well width fluctuations. this causes the minority carriers to be effectively trapped in regions of enhanced well width, where they recombine radiatively before reaching he dislocation.
New Kinds of Quantum Wells ( Book )
1 edition published in 1990 in English and held by 1 library worldwide
The research concentrated almost exclusively on the InAs/A1SB quantum well system, with some supporting work on the GaSb/A1Sb system. Many advances were made. The overall quality of the quantum wells improved, now routinely yielding room-temperature mobilities of 30,000cm2/Vs for 15nm wide wells. A new two-donor model explains the electron concentrations, in terms of a deep EL2- like bulk donor and a mysterious interface donor near the bottom of the well, below the lowest quantum state. A first systematic study of transport properties vs. well widths was undertaken, showing a steep drop in mobility for well widths below 10nm. Cyclotron resonance data taken at the University of Munich give quantitative evidence of non-parabolicity under the combined effect of quantization and band filling. Field effect transistors and photoluminescence data continue to present difficulties. Tilted superlattices (TSLs) from the GaSb/A1Sb system were demonstrated, with very promising properties, as were InAs quantum wells that incorporate GaSb/A1Sb TSLs either as corrugated barriers or as periodic center loading. A record electron mobility for InAs (613,000sq.cm/ Vs) was obtained in the corrugated barrier well.
Research on Semiconductor Heterostructures ( Book )
1 edition published in 1986 in English and held by 1 library worldwide
A wide diversity of topics related to various new properties of semiconductor heterostructures were investigated, ranging from an intense occupation with the problem of the band lineup at semiconductor heterojunctions, to the problem of the MBE growth of GaAs/Ge alloys and the structure of these alloys, with a variety of topics in between. The development, under this contract, of the C-V profiling technique for the determination of heterojunction band offsets has since then emerged as the most reliable technique of offset determination and which has widely displaced the quantum well absorption technique as the preferred method of offset determination. Below-gap light emission from staggered-lineup heterojunctions has become unusually timely with the discovery that the (Al, Ga)As/GaAs heterosystem is a staggered-lineup system. Several other topics investigated also contributed to an advancement of the understanding of semiconductor heterostructures.
Research on Microwave Amplification in Semiconductors. Volume I. Experimental Work ( Book )
1 edition published in 1971 in English and held by 1 library worldwide
The significance of this research to the Air Force lies in the following two unrelated conclusions: (1) A solid-state traveling-wave microwave amplifier in germanium can not be built; and (2) There appears to exist the possibility of an improved contact technology for Gunn Effect devices. The objective of this research has been two-fold: (1) to construct a two-port solid-state traveling-wave microwave amplifier, utilizing the negative transverse mobility (NTM) which had been reported to exist in germanium; and (2) to correlate, by potential probing experiments, the performance of Gunn effect devices with the near-cathode space charge dynamics, and to attempt to prepare (n+)on(n) contacts by tin diffusion from a refractory metal deposit. Objective (1) was not achieved. An NTM apparently does not exist in Ge. Earlier experimental reports which had been interpreted as the NTM effect are believed to have been caused by weakly injecting contacts, which cause an injection instability similar to a unijunction transistor instability. Objective (2) was partially achieved. Various metallurgical problems were identified and overcome, to the point that the metallurgical difficulties are believed to be essentially solved. A second problem identified was p-type conversion of the active layer during the diffusion process. It is believed to be simply a problem of process purity and/or control.
Polar-on-Nonpolar Epitaxy: Sublattice Ordering in the Nucleation and Growth of GaP on Si (211) Surfaces ( Book )
1 edition published in 1982 in English and held by 1 library worldwide
Heterostructure Bipolar Transistors and Integrated Circuits ( Book )
1 edition published in 1981 in English and held by 1 library worldwide
The Peierls Instability Including Non-Linear Screening ( Book )
1 edition published in 1975 in English and held by 1 library worldwide
In this paper we wish to determine the conditions under which a one-dimensional (1D) metal undergoes a Peierls instability (PI) at 0 K, when screening by nearly free conduction electrons is included. Many years ago Peierls suggested, more or less in passing, that a 1D metal would be inherently unstable to a lattice deformation of wave-number q = 2 K sub F, (K sub F = Fermi wavenumber). His suggestion was later proved at least partially correct in papers by Frohlich and by Rice and Strassler in which electron-electron interaction, and hence screening, was ignored.
The Effect of Band Filling on the Width of the Minigaps on Long-Period One-Dimensional Superlattices ( Book )
1 edition published in 1974 in English and held by 1 library worldwide
In superlattices with a long period (greater than or approximately equal to 100A) the miniband structure depends noticeably on the number of free electrons present and on how those electrons are distributed in energy. The minigap width between the first and second miniband decreases at first rapidly, then slowly, with an increasing number of electrons in the lowest miniband. For an exactly full first miniband the free-electron dielectric constant for perturbations of the superlattice wavelength is large (the Kohn anomaly) and highly non-linear. Transferring electrons into the second miniband increases the minigap width. For strongly inverted non-equilibrium distributions an electrostatic instability can occur in the band structure under certain extreme conditions.
Früherer Name Krömer, Herbert 1928- dt. Vorlagen
Krömer, H. 1928-
Krömer, Herbert, 1928-