WorldCat Identities

Kroemer, Herbert 1928-

Overview
Works: 26 works in 79 publications in 5 languages and 2,120 library holdings
Roles: Author
Classifications: QC311.5, 536.7
Publication Timeline
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Most widely held works about Herbert Kroemer
 
Most widely held works by Herbert Kroemer
Thermal physics by Charles Kittel( Book )
42 editions published between 1980 and 2013 in 4 languages and held by 1,151 WorldCat member libraries worldwide
Selected works of Professor Herbert Kroemer by Herbert Kroemer( )
3 editions published in 2008 in English and held by 669 WorldCat member libraries worldwide
Information technology has changed our society radically. Just as the integrated circuits have been the prime mover for electronics, high-speed transistors and semiconductor lasers based on heterostructures are now playing the same role in modern telecommunications. Professor Kroemer's conceptual work on heterostructures began in the early 1950s as he was looking for a way to improve transistor speed and performance. In the 1960s, he applied the same principles to the development of lasers and light-emitting diodes, showing that they could achieve continuous operation at room temperature - something thought impossible at that time. His deep fundamental scientific work has had a profound effect on technology and society, transforming and improving our lives.This reprint collection brings together Professor Kroemer's most important papers, presenting a comprehensive perspective of the field. It covers topics ranging from substrate materials, electronic properties, process technology, and devices, to circuits and applications. This reprint collection will help the reader identify the key stages in the development of heterostructure devices and lasers from early research through to its integration in current manufacturing. Devoted to R&D engineers and scientists who are actively involved in extending the nano- and microelectronics roadmap mainly via heterostructure engineering, this volume may also serve as a reference for postgraduate and research students
Quantum mechanics : for engineering, materials science, and applied physics by Herbert Kroemer( Book )
5 editions published in 1994 in English and held by 238 WorldCat member libraries worldwide
Polymeranalytik : makromolekulare Strukturen, physikalische Methoden, Anwendungskriterien by Martin Hoffmann( Book )
4 editions published in 1977 in German and Undetermined and held by 28 WorldCat member libraries worldwide
Instructor's guide for thermal physics by Charles Kittel( Book )
3 editions published in 1980 in English and held by 7 WorldCat member libraries worldwide
Polymeranalytik : makromolekulare Strukturen, physikalische Methoden, Anwendungskriterien by Martin Hoffmann( Book )
1 edition published in 1977 in German and held by 4 WorldCat member libraries worldwide
Netsu butsurigaku ( Book )
1 edition published in 1983 in Japanese and held by 3 WorldCat member libraries worldwide
Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic ( Book )
2 editions published between 1986 and 1987 in English and held by 2 WorldCat member libraries worldwide
The following report describes the results of research on III-V molecular bm epitaxial (MBE) growth, material characterization and the fabrication of heterostructure bipolar transistors (HBT) for very high speed logic applications. During the reporting period work on the InGaP/GaAs heterojunction (HJ) was completed. Isotype HJs were grown and evaluated by a CV reconstruction method in order to determine the energy band. offsets. It was found that Ec=0.21 eV and Ev=0.25 eV for the lattice matched composition. A new direction toward improvement in performance and the fabrication techniques for the AlGaAs/GaAs HBT was successfully demonstrated. Graded-bandgap nonalloyed ohmic contacts using n+ InAs and GaAs for the AlGaAs emitter and p+ GaSb for the GaAs base were provided by selective epitaxial regrowth. The MBE growth conditions for grading from GaAs to InAs to GaSb were determined. Low specific contact resistances were observed for both contact types. A AlGaAs/GaAs graded-gap contact HBT was grown. A current gain of 20 was measured with only simple wire probes on the base and emitter
SRC/UCSB GaAs digital device research core program ( Book )
1 edition published in 1985 in English and held by 1 WorldCat member library worldwide
Research on Microwave Amplification in Semiconductors. Volume I. Experimental Work ( Book )
1 edition published in 1971 in English and held by 1 WorldCat member library worldwide
The significance of this research to the Air Force lies in the following two unrelated conclusions: (1) A solid-state traveling-wave microwave amplifier in germanium can not be built; and (2) There appears to exist the possibility of an improved contact technology for Gunn Effect devices. The objective of this research has been two-fold: (1) to construct a two-port solid-state traveling-wave microwave amplifier, utilizing the negative transverse mobility (NTM) which had been reported to exist in germanium; and (2) to correlate, by potential probing experiments, the performance of Gunn effect devices with the near-cathode space charge dynamics, and to attempt to prepare (n+)on(n) contacts by tin diffusion from a refractory metal deposit. Objective (1) was not achieved. An NTM apparently does not exist in Ge. Earlier experimental reports which had been interpreted as the NTM effect are believed to have been caused by weakly injecting contacts, which cause an injection instability similar to a unijunction transistor instability. Objective (2) was partially achieved. Various metallurgical problems were identified and overcome, to the point that the metallurgical difficulties are believed to be essentially solved. A second problem identified was p-type conversion of the active layer during the diffusion process. It is believed to be simply a problem of process purity and/or control
Polar-on-Nonpolar Epitaxy: Sublattice Ordering in the Nucleation and Growth of GaP on Si (211) Surfaces ( Book )
1 edition published in 1982 in English and held by 1 WorldCat member library worldwide
Research of MBE Growth and Properties of Semiconductors Hetero-Interfaces with Unusual Band Lineups ( Book )
1 edition published in 1987 in English and held by 1 WorldCat member library worldwide
A wide diversity of topics related to various new properties of semiconductor heterostructures were investigated: (a) Staggered-lineup luminescence; (b) Band offsets at lattice-matched (Ga, In) P/GaAs heterojunctions; (c) Optical properties of GaSb/A1Sb multi-quantum well structures; (d) Growth of InAs/GaSb broken-gap heterojunctions; (e) Alternating-beam MBE; (f) Tilted super-lattices; (g) Schottky barriers between metals and semiconducting polymers. The determination of the band lineups at the (Ga, In) P/GaAs heterojunction, and the achievement of tilted super-lattices by alternating-beam MBE were probably the most significant of these developments. The latter of these two forms the core of research under an ongoing follow-up contract. Keywords: Gallium arsenides; Gallium indium phosphides; Indium arsenides; Gallium antimonides; Aluminum antimonides; Molecular beam epitaxial growth; Heterojunctions; Quantum wells. (jhd)
Zur Theorie des Germaniumgleichrichters und des Transistors : mit 10 Fig. im Text by Herbert Kroemer( Book )
1 edition published in 1953 in German and held by 1 WorldCat member library worldwide
Polymeranalytik : makromolekulare Strukturen, physikalische Methoden, Anwendungskriterien by Martin Hoffmann( Book )
1 edition published in 1977 in German and held by 1 WorldCat member library worldwide
Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic ( Book )
1 edition published in 1986 in English and held by 1 WorldCat member library worldwide
Graded regions of n-(Ga, In)As and p-Ga(As, Sb) were incorporated side-by-side as emitter and base contacts respectively, into an npn (Al, Ga)As/GaAs heterostructure bipolar transistor (HBT). The process involved two separate MBE growths, leading to base contact regions that were self-aligned to the emitter mesas. The devices could be easily probed with pressure contacts even prior to any metallization, and excellent characteristics were obtained after final metallization
The Effect of Band Filling on the Width of the Minigaps on Long-Period One-Dimensional Superlattices ( Book )
1 edition published in 1974 in English and held by 1 WorldCat member library worldwide
In superlattices with a long period (greater than or approximately equal to 100A) the miniband structure depends noticeably on the number of free electrons present and on how those electrons are distributed in energy. The minigap width between the first and second miniband decreases at first rapidly, then slowly, with an increasing number of electrons in the lowest miniband. For an exactly full first miniband the free-electron dielectric constant for perturbations of the superlattice wavelength is large (the Kohn anomaly) and highly non-linear. Transferring electrons into the second miniband increases the minigap width. For strongly inverted non-equilibrium distributions an electrostatic instability can occur in the band structure under certain extreme conditions
Research on Semiconductor Heterostructures ( Book )
1 edition published in 1986 in English and held by 1 WorldCat member library worldwide
A wide diversity of topics related to various new properties of semiconductor heterostructures were investigated, ranging from an intense occupation with the problem of the band lineup at semiconductor heterojunctions, to the problem of the MBE growth of GaAs/Ge alloys and the structure of these alloys, with a variety of topics in between. The development, under this contract, of the C-V profiling technique for the determination of heterojunction band offsets has since then emerged as the most reliable technique of offset determination and which has widely displaced the quantum well absorption technique as the preferred method of offset determination. Below-gap light emission from staggered-lineup heterojunctions has become unusually timely with the discovery that the (Al, Ga)As/GaAs heterosystem is a staggered-lineup system. Several other topics investigated also contributed to an advancement of the understanding of semiconductor heterostructures
Theory of Heterojunction Discontinuities ( Book )
1 edition published in 1976 in English and held by 1 WorldCat member library worldwide
The problem of theoretically understanding and predicting the energy band lineups at abrupt semiconductor heterojunctions was investigated. Methods were developed that represent a significant advance in the problem and that permit a prediction of the band edge discontinuities from the known energy band structures, by means of self-consistent pseudopotential calculations. (Author)
New Kinds of Quantum Wells ( )
1 edition published in 1990 in English and held by 1 WorldCat member library worldwide
The research concentrated almost exclusively on the InAs/A1SB quantum well system, with some supporting work on the GaSb/A1Sb system. Many advances were made. The overall quality of the quantum wells improved, now routinely yielding room-temperature mobilities of 30,000cm2/Vs for 15nm wide wells. A new two-donor model explains the electron concentrations, in terms of a deep EL2- like bulk donor and a mysterious interface donor near the bottom of the well, below the lowest quantum state. A first systematic study of transport properties vs. well widths was undertaken, showing a steep drop in mobility for well widths below 10nm. Cyclotron resonance data taken at the University of Munich give quantitative evidence of non-parabolicity under the combined effect of quantization and band filling. Field effect transistors and photoluminescence data continue to present difficulties. Tilted superlattices (TSLs) from the GaSb/A1Sb system were demonstrated, with very promising properties, as were InAs quantum wells that incorporate GaSb/A1Sb TSLs either as corrugated barriers or as periodic center loading. A record electron mobility for InAs (613,000sq.cm/ Vs) was obtained in the corrugated barrier well
The Peierls Instability Including Non-Linear Screening ( Book )
1 edition published in 1975 in English and held by 1 WorldCat member library worldwide
In this paper we wish to determine the conditions under which a one-dimensional (1D) metal undergoes a Peierls instability (PI) at 0 K, when screening by nearly free conduction electrons is included. Many years ago Peierls suggested, more or less in passing, that a 1D metal would be inherently unstable to a lattice deformation of wave-number q = 2 K sub F, (K sub F = Fermi wavenumber). His suggestion was later proved at least partially correct in papers by Frohlich and by Rice and Strassler in which electron-electron interaction, and hence screening, was ignored
 
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Alternative Names
Krömer, H. 1928-
Krömer, Herbert.
Krömer, Herbert 1928-
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Languages
English (52)
German (16)
Italian (3)
Japanese (1)
Spanish (1)
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