WorldCat Identities

Klitzing, K. von

Overview
Works: 45 works in 82 publications in 2 languages and 665 library holdings
Genres: Conference papers and proceedings 
Roles: Editor, Other, Author, Creator, Opponent
Publication Timeline
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Most widely held works about K. von Klitzing
 
Most widely held works by K. von Klitzing
Physics and applications of quantum wells and superlattices by E. E Mendez( Book )

15 editions published between 1987 and 1989 in English and held by 267 WorldCat member libraries worldwide

Contents: A Perspective in Quantum-Structure Development; Electronic States in Semiconductor Heterostructures; Molecular Beam Epitaxy of Artificially Layered III-V Semiconductors on an Atomic Scale; Molecular Beam Epitaxial Growth and Properties of Hg( - ) based Microstructures; Strained Layer Superlattices; Electrical Transport in Microstructures; Physics of Resonant Tunneling in Semiconductors; Thermodynamic and Magneto-Optic Investigations of the Landau-level Density of States for 2D Electrons; High Field Magnetotransport: Lectures I and II: Analysis of Shubnikov-de Haas Oscillations and Parallel Field Magnetotransport; Physics and Applications of The Quantum Hall Effect; High Field Magnetotransport: Lecture III: The Fractional Quantum Hall Effect; Optical Properties of Quantum Wells; Raman Spectroscopy for the Study of Semiconductor Heterostructures and Superlattices; Far-Infrared Spectroscopy in Two-Dimensional Electronic Systems; Magneto-optical Properties of Heterojunctions, Quantum Wells, and Superlattices; Band-gap Engineering for New Photonic and Electronic Devices; Hot-Electron Spectroscopy and Transistor Design; Novel Tunneling Structures: Physics and Device Implications; and Opto-electronics in Semiconductor Quantum Wells Structures: Physics and Applications. Books; Symposia. (JHD)
The wonder of nanotechnology : quantum optoelectronic devices and applications by M Razeghi( )

9 editions published in 2013 in English and held by 125 WorldCat member libraries worldwide

When you look closely, nature is nanotechnology at its finest. From a single cell, a factory all by itself, to complex systems, such as the nervous system or the human eye, each is composed of specialized nanostructures that exist to perform a specific function. This same beauty can be mirrored when we interact with the tiny physical world that is the realm of quantum mechanics. This book focuses on the application of nanotechnology to modern semiconductor optoelectronic devices. Electrons, photons, and even thermal properties can all be engineered at the nanolevel. The 2D quantum well, possibly the simplest aspect of nanotechnology, has dramatically enhanced the efficiency and versatility of electronic and optoelectronic devices. While this area alone is fascinating, nanotechnology has now progressed to 1D (quantum wire) and 0D (quantum dot) systems that exhibit remarkable and sometimes unexpected behaviors. With these components serving as the modern engineer's building blocks, it is a brave new world we live in, with endless possibilities for new technology and scientific discovery
Applied scanning probe methods by Bharat Bhushan( )

7 editions published in 2009 in English and held by 50 WorldCat member libraries worldwide

The volumes XI, XII and XIII examine the physical and technical foundation for recent progress in applied scanning probe techniques. The first volume came out in January 2004, the second to fourth volumes in early 2006 and the fifth to seventh volumes in late 2006. The field is progressing so fast that there is a need for a set of volumes every 12 to 18 months to capture latest developments. These volumes constitute a timely comprehensive overview of SPM applications. After introducing scanning probe microscopy, including sensor technology and tip characterization, chapters on use in various industrial applications are presented. Industrial applications span topographic and dynamical surface studies of thin-film semiconductors, polymers, paper, ceramics, and magnetic and biological materials. The chapters have been written by leading researchers and application scientists from all over the world and from various industries to provide a broader perspective
Grenzen der Mikroelektronik : Quantenphänomene in mikrostrukturierten Halbleitern by K. von Klitzing( Book )

2 editions published in 1995 in German and held by 33 WorldCat member libraries worldwide

Einzelelektronen-Transistoren auf Spitzen zur Verwendung in der Rastersondenmikroskopie bei tiefen Temperaturen by Jochen Weber( )

2 editions published in 2009 in German and held by 18 WorldCat member libraries worldwide

Auch knapp 30 Jahre nach der Entdeckung des Quanten-Hall-Effektes existiert noch kein mikroskopisch geschlossenes Bild zu dessen Beschreibung. Die lokalen elektrischen Eigenschaften in zweidimensionalen Elektronensystemen (2DES) sind dabei aktuell von besonderem Interesse. Im Rahmen von lokalen elektrischen Messungen kann eine besonders hohe Empfindlichkeitdurch den Einsatz eines Einzelelektronen-Transistors erreicht werden, der sich auf der Spitze eines Rastersondenmikroskopes befindet und als lokales Elektrometer eingesetzt wird. Zur Untersuchung zeitlich korrelierter Effekte ist es jedoch notwendig, gleichzeitige Potentialmessungen an verschiedenen Stellen der Probe durchführen zu können. Im Rahmen dieser Arbeit wurden Einzelelektronen-Transistoren (SETs) auf einer Reihe nebeneinander angeordneter Spitzen (Spitzen-Array) zur Verwendung in der Rastersondenmikroskopie bei tiefen Temperaturen und großen Magnetfeldern entwickelt und hergestellt. Nach der elektrischen Charakterisierung wurde die Eignung als Elektrometer bei Untersuchungen von magnetisch induzierten elektrischen Ungleichgewichten in einem zweidimensionalen Elektronensystem im Bereich des Quanten-Hall-Effektes demonstriert. Das gewählte Konzept verwendet eine symmetrische AlGaAs/GaAs-Heterostruktur mit darunterliegender Al0,7Ga0,3As-Opferschicht zur Herstellung freistehender, in der Waferebene liegenden Spitzen. Ein Graben entlang der Mitte jeder Spitze sowie zwischen den einzelnen Spitzen sorgt in Verbindung mit der Bedampfung mit Aluminium unter einem Winkel, dass durcheinen Metallabriss an den Grabenflanken zwei separate Kontakte (Source und Drain) ans Ende der Spitze geführt werden. Durch Oxidation der Aluminiumoberfläche werden Tunnelbarrieren erzeugt, anschließend wird die SET-Insel auf die Endfläche der Spitze aufgedampft. Die Inselgröße beträgt typischerweise ca. 280 nm × 150 nm. Der Raumtemperatur-Gesamtwiderstand der Tunnelbarrieren eines SETs beträgt typischerweise ca. 100 kOhm. Die Ladeenergie EC = e2/(2C)liegt im Bereich zwischen 25 µeV und 50 µeV, was zum Einsatz der SETs üblicherweise einen 3He - 4He - Mischkryostaten erforderlich macht. An einem nicht-rasternden Versuchsaufbau, bei dem ein Array von SET-Spitzen gegenüber einer Hall-Probe fixiert angeordnet ist, wurden gleichzeitige Messungen mit zwei SETs durchgeführt. Dabei wurden magnetisch induzierte "Potential"-Hysteresen untersucht, die bei einer Veränderung des senkrecht zum 2DES verlaufenden Magnetfeldes in Abhängigkeit von der Richtung der Magnetfeldänderung in der Nähe kleiner ganzzahliger Landau-Niveau-Füllfaktoren 1 bis 4 des 2DES auftraten. Potentialänderungen von bis zu 55 mV bei Füllfaktor 1 konnten gemessen werden. Bei Untersuchungen des Relaxationsverhaltens wurde ein schneller, teilweiser Rückgang der Potentialdifferenz zwischen dem Inneren und dem Rand des 2DES beobachtet, gefolgt von einer über mindestens mehrere Stunden bestehenden Stabilität des Rest-Ungleichgewichts. Bei einer Umkehr der Richtung der Magnetfeldänderung waren bereits kleine Änderungen um wenige Milli-Tesla ausreichend, um die gegenüberliegende Hysteresekurve zu erreichen. Die Annäherung an die gegenüberliegende Kurve erfolgte dabei nicht linear, sondern mit kleiner werdenden Schritthöhen bei gleichbleibenden Schrittweiten, so dass eine wiederholte Umkehr der Magnetfeldrichtung zu inneren Hysteresen innerhalb der eigentlichen Hysterese-Hüllkurven führte. Abschließend wurde ein Modell entwickelt, das aufbauend auf einer Landschaft aus kompressiblen und inkompressiblen Bereichen innerhalb des 2DES, wie sie auch aus früheren Untersuchungen mittels Rasterkraftmikroskop bekannt sind, eine Erklärung der beobachteten Effekte gibt
Probing the liquid and solid phases in closely spaced two-dimensional systems by Ding Zhang( )

1 edition published in 2014 in English and held by 17 WorldCat member libraries worldwide

Scanning probe spectroscopy of graphene nanostructures by Benjamin Krauß( )

1 edition published in 2012 in English and held by 17 WorldCat member libraries worldwide

Transport properties of electrolyte gated graphene devices by Federico Paolucci( )

1 edition published in 2015 in English and held by 16 WorldCat member libraries worldwide

Parallel arrangements of quantum dots and quantum point contacts in high magnetic fields periodic conductance modulations with magnetic flux change by Leonhard Ferdinand Schulz( )

1 edition published in 2014 in English and held by 16 WorldCat member libraries worldwide

Critical phenomena in bilayer excitonic condensates by Xuting Huang( )

1 edition published in 2012 in English and held by 16 WorldCat member libraries worldwide

Spin physics in semiconductors by M. I Dyakonov( )

2 editions published in 2008 in English and held by 15 WorldCat member libraries worldwide

This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed
Applied scanning probe methods XI : scanning probe microscopy techniques by Bharat Bhushan( )

2 editions published in 2009 in English and held by 9 WorldCat member libraries worldwide

Annotation
Two-dimensional Coulomb liquids and solids by I︠U︡. P Monarkha( )

1 edition published in 2004 in English and held by 7 WorldCat member libraries worldwide

Includes different levels of sophistication so as to be useful for both theorists and experimentalists. The presentation is largely self-contained, and also describes some instructive examples that will be of general interest to solid-state physicists."--Jacket
Bindungsstörungen by K. von Klitzing( Book )

1 edition published in 2009 in German and held by 7 WorldCat member libraries worldwide

Physical properties of quasicrystals by Zbigniew M Stadnik( )

1 edition published in 1999 in English and held by 7 WorldCat member libraries worldwide

Physical Properties of Quasicrystals presents an up-to-date introduction to the field of quasicrystals, a new form of matter which was discovered only in 1984. The field is inspected from an experimental point of view and the results are interpreted within the framework of the existing theoretical models. The book discusses our current understanding of the unusual physical properties of quasicrystals, as well as highlighting the challenges associated with the physical interpretation of the properties of these complex and fascinating materials. The book is written by a team of active researchers and conveys the sense of an excitement associated with research in a rapidly developing area of new alloys. A wealth of measured experimental data is presented and important information is given in a convenient tabular form. Although the book is aimed at a broad audience interested in the intriguing physical properties of these novel alloys, it will be of general use both to long-time workers in the field and uninitiated graduate students
Galvanomagnetische Eigenschaften an Tellur in starken Magnetfeldern by K. von Klitzing( Book )

3 editions published in 1972 in German and held by 4 WorldCat member libraries worldwide

200 Jahre Georg Simon Ohm : 1789-1989( Book )

1 edition published in 1989 in Undetermined and held by 4 WorldCat member libraries worldwide

How long is one meter? by K. von Klitzing( Recording )

1 edition published in 1993 in English and held by 3 WorldCat member libraries worldwide

Von Klitzing discusses attempts throughout history to establish exact values of measurement, and the development of the current system of weights and measures
Quantum dots and single electron tunneling by K. von Klitzing( Visual )

2 editions published in 1998 in English and held by 3 WorldCat member libraries worldwide

At a NIST colloquium held April 17, 1998 at the National Institute of Standards and Technology, Dr. von Klitzing discusses the connection between a two-dimensional electron system in a magnetic field (Quantum Hall device) and a one-dimensional electron system without magnetic field (quantum point contact)
Applied Scanning Probe Methods XIII : Characterization by Phaedon Avouris( )

1 edition published in 2009 in English and held by 3 WorldCat member libraries worldwide

Crack initiation and growth are key issues when it comes to the mechanical reliab- ity of microelectronic devices and microelectromechanical systems (MEMS). Es- cially in organic electronics where exible substrates will play a major role these issues will become of utmost importance. It is therefore necessary to develop me- ods which in situ allow the experimental investigation of surface deformation and fracture processes in thin layers at a micro and nanometer scale. While scanning electron microscopy (SEM) might be used it is also associated with some major experimental drawbacks. First of all if polymers are investigated they usually have to be coated with a metal layer due to their commonly non-conductive nature. Additi- ally they might be damaged by the electron beam of the microscope or the vacuum might cause outgasing of solvents or evaporation of water and thus change material properties. Furthermore, for all kinds of materials a considerable amount of expe- mental effort is necessary to build a tensile testing machine that ts into the chamber. Therefore, a very promising alternative to SEM is based on the use of an atomic force microscope (AFM) to observe in situ surface deformation processes during straining of a specimen. First steps towards this goal were shown in the 1990s in [1-4] but none of these approaches truly was a microtensile test with sample thicknesses in the range of micrometers. To the authors' knowledge, this was shown for the rst time by Hild et al. in [5]. 16
 
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Spin physics in semiconductors
Alternative Names
Klaus von Klitzing deutscher Physiker

Klaus von Klitzing Duits natuurkundige

Klaus von Klitzing fisico tedesco

Klaus von Klitzing German Physicist

Klaus von Klitzing niemiecki fizyk

Klaus von Klitzing physicien allemand

Klaus von Klitzing tysk fysikar

Klaus von Klitzing tysk fysiker

Klauss fon Klicings

Klitsing Klaus fon

Klitzing, K. von.

Klitzing, Klaus von

Von Klitzing, K.

Von Klitzing, Klaus

von Klitzing, Klaus 1943-

Клаус фон Клицинг

Клаус фон Клітцинг

Клаўс фон Клітцынг

Клитцинг, Клаус фон

קלאוס פון קליצינג

كلاوس فون كليتزينج

كلاوس فون كليتزينغ

کلاز فان کلتزنگ

کلاوس فون کلیتسینگ فیزیک‌دان آلمانی

کلاوس ون کلٹزنگ

क्लाउस फोन क्लित्झिंग भौतिकशास्त्रातील नोबेल पारितोषिकविजेता शास्त्रज्ञ.

ক্লাউস ফন ক্লিৎসিং

클라우스 폰 클리칭

クラウス・フォン・クリッツィング

克劳斯·冯·克利青

Languages
English (47)

German (8)

Covers
Spin physics in semiconductorsBindungsstörungen