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Advanced high speed devices

Author: Michael Shur; Paul Maki; World Scientific (Firm)
Publisher: Singapore ; Hackensack, N.J. : World Scientific Pub. Co., ©2010.
Series: Selected topics in electronics and systems, v. 51.
Edition/Format:   eBook : Document : Conference publication : EnglishView all editions and formats
Database:WorldCat
Summary:
Advanced High Speed Devices covers five areas of advanced device technology : terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists.  Read more...
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Genre/Form: Electronic books
Conference papers and proceedings
Congresses
Material Type: Conference publication, Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Michael Shur; Paul Maki; World Scientific (Firm)
ISBN: 9789814287876 9814287873
OCLC Number: 630164523
Description: 1 online resource (x, 192 pages) : illustrations (some color).
Contents: Simulation and experimental results on GaN based ultra-short planar negative differential conductivity diodes for THz power generation / B. Aslan, L.F. Eastman and Q. Diduck --
5-terminal THz GaN based transistor with field- and space-charge control electrodes / G. Simin, M.S. Shur and R. Gaska --
Performance comparison of scaled III-V and Si ballistic nanowire MOSFETs / L. Wang [and others] --
A room temperature ballistic deflection transistor for high performance applications / Q. Diduck, H. Irie and M. Margala --
Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's / T. Otsuji [and others] --
Millimeter wave to terahertz in CMOS / K.K. O, S. Sankaran [and others] --
The effects of increasing AlN mole fraction on the performance of AlGaN active regions containing nanometer scale compositionally inhomogeneities / A.V. Sampath [and others] --
Surface acoustic wave propagation in GaN-On-sapphire under pulsed sub-band ultraviolet illumination / V.S. Chivukula [and others] --
Solar-blind single-photon 4H-SiC avalanche photodiodes / A. Vert [and others] --
Monte Carlo simulations of In[symbol]Ga[symbol]As MOSFETs at 0.5 V supply voltage for high-performance CMOS / J.S. Ayubi-Moak, K. Kalna and A. Asenov --
The first 70nm 6-inch GaAs PHEMT MMIC process / H. Karimy [and others] --
High-performance 50-nm metamorphic high electron-mobility transistors with high breakdown voltages / D. Xu [and others] --
MBE growth and characterization of Mg-doped III-nitrides on sapphire / X. Chen [and others] --
Performance of MOSFETs on reactive-ion-etched GaN surfaces / K. Tang, W. Huang, T.P. Chow --
High current density/high voltage AlGaN/GaN HFETs on sapphire / J. Shi, M. Pophristic and L.F. Eastman --
InAlN/GaN MOS-HEMT with thermally grown oxide / M. Alomari [and others] --
GaN transistors for power switching and millimeter-wave applications / T. Ueda [and others] --
4-nm AlN barrier all binary HFET with SiNx gate dielectric / T. Zimmermann [and others] --
Effect of gate oxide processes on 4H-SiC MOSFETs on (000-1) oriented substrate / H. Naik, K. Tang and T.P. Chow --
Characterization and modeling of integrated diode in 1.2kV 4H-SiC vertical power MOSFET / H. Naik, Y. Wang and T.P. Chow --
Packaging and wide-pulse switching of 4 mm x 4 mm silicon carbide GTOs / H. O'Brien and M.G. Koebke --
Bi-directional scalable solid-state circuit breakers for hybrid-electric vehicles / D.P. Urciuoli and V. Veliadis.
Series Title: Selected topics in electronics and systems, v. 51.
Responsibility: editors, Michael S. Shur, Paul Maki.

Abstract:

Suitable for device and electronics engineers and scientists, this work covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors,  Read more...

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