skip to content
Advanced high speed devices Preview this item
ClosePreview this item
Checking...

Advanced high speed devices

Author: Michael Shur; Paul Maki; World Scientific (Firm)
Publisher: Singapore ; Hackensack, N.J. : World Scientific Pub. Co., ©2010.
Series: Selected topics in electronics and systems, v. 51.
Edition/Format:   eBook : Document : Conference publication : EnglishView all editions and formats
Database:WorldCat
Summary:
Advanced High Speed Devices covers five areas of advanced device technology : terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists.  Read more...
Rating:

(not yet rated) 0 with reviews - Be the first.

Subjects
More like this

 

Find a copy online

Links to this item

Find a copy in the library

&AllPage.SpinnerRetrieving; Finding libraries that hold this item...

Details

Genre/Form: Electronic books
Congresses
Material Type: Conference publication, Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Michael Shur; Paul Maki; World Scientific (Firm)
ISBN: 9789814287876 9814287873
OCLC Number: 630164523
Notes: "This volume contains the proceedings of the 2008 biennial Lester Eastman Conference (LEC), which was held on the Cornell University of Delaware campus on August 5-7, 2008. Conference was known as IEEE/Cornell University Conference on High Performance Devices"--Pref.
Description: 1 online resource (x, 192 p.) : ill. (some col.)
Contents: Simulation and experimental results on GaN based ultra-short planar negative differential conductivity diodes for THz power generation / B. Aslan, L.F. Eastman and Q. Diduck --
5-terminal THz GaN based transistor with field- and space-charge control electrodes / G. Simin, M.S. Shur and R. Gaska --
Performance comparison of scaled III-V and Si ballistic nanowire MOSFETs / L. Wang ... [et al.] --
A room temperature ballistic deflection transistor for high performance applications / Q. Diduck, H. Irie and M. Margala --
Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's / T. Otsuji ... [et al.] --
Millimeter wave to terahertz in CMOS / K.K. O, S. Sankaran ... [et al.] --
The effects of increasing AlN mole fraction on the performance of AlGaN active regions containing nanometer scale compositionally inhomogeneities / A.V. Sampath ... [et al.] --
Surface acoustic wave propagation in GaN-On-sapphire under pulsed sub-band ultraviolet illumination / V.S. Chivukula ... [et al.] --
Solar-blind single-photon 4H-SiC avalanche photodiodes / A. Vert ... [et al.] --
Monte Carlo simulations of In[symbol]Ga[symbol]As MOSFETs at 0.5 V supply voltage for high-performance CMOS / J.S. Ayubi-Moak, K. Kalna and A. Asenov --
The first 70nm 6-inch GaAs PHEMT MMIC process / H. Karimy ... [et al.] --
High-performance 50-nm metamorphic high electron-mobility transistors with high breakdown voltages / D. Xu ... [et al.] --
MBE growth and characterization of Mg-doped III-nitrides on sapphire / X. Chen ... [et al.] --
Performance of MOSFETs on reactive-ion-etched GaN surfaces / K. Tang, W. Huang, T.P. Chow --
High current density/high voltage AlGaN/GaN HFETs on sapphire / J. Shi, M. Pophristic and L.F. Eastman --
InAlN/GaN MOS-HEMT with thermally grown oxide / M. Alomari ... [et al.] --
GaN transistors for power switching and millimeter-wave applications / T. Ueda ... [et al.] --
4-nm AlN barrier all binary HFET with SiNx gate dielectric / T. Zimmermann ... [et al.] --
Effect of gate oxide processes on 4H-SiC MOSFETs on (000-1) oriented substrate / H. Naik, K. Tang and T.P. Chow --
Characterization and modeling of integrated diode in 1.2kV 4H-SiC vertical power MOSFET / H. Naik, Y. Wang and T.P. Chow --
Packaging and wide-pulse switching of 4 mm x 4 mm silicon carbide GTOs / H. O'Brien and M.G. Koebke --
Bi-directional scalable solid-state circuit breakers for hybrid-electric vehicles / D.P. Urciuoli and V. Veliadis.
Series Title: Selected topics in electronics and systems, v. 51.
Responsibility: editors, Michael S. Shur, Paul Maki.

Abstract:

Suitable for device and electronics engineers and scientists, this work covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors,  Read more...

Reviews

User-contributed reviews
Retrieving GoodReads reviews...
Retrieving DOGObooks reviews...

Tags

Be the first.
Confirm this request

You may have already requested this item. Please select Ok if you would like to proceed with this request anyway.

Linked Data


<http://www.worldcat.org/oclc/630164523>
library:oclcnum"630164523"
library:placeOfPublication
library:placeOfPublication
library:placeOfPublication
owl:sameAs<info:oclcnum/630164523>
rdf:typeschema:Book
schema:about
schema:about
schema:about
schema:about
<http://id.worldcat.org/fast/975602>
rdf:typeschema:Intangible
schema:name"Integrated circuits--Very large scale integration"@en
schema:about
schema:about
schema:about
schema:about
schema:about
schema:about
schema:about
schema:bookFormatschema:EBook
schema:contributor
schema:contributor
schema:contributor
schema:contributor
schema:copyrightYear"2010"
schema:datePublished"2010"
schema:description"Simulation and experimental results on GaN based ultra-short planar negative differential conductivity diodes for THz power generation / B. Aslan, L.F. Eastman and Q. Diduck -- 5-terminal THz GaN based transistor with field- and space-charge control electrodes / G. Simin, M.S. Shur and R. Gaska -- Performance comparison of scaled III-V and Si ballistic nanowire MOSFETs / L. Wang ... [et al.] -- A room temperature ballistic deflection transistor for high performance applications / Q. Diduck, H. Irie and M. Margala -- Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's / T. Otsuji ... [et al.] -- Millimeter wave to terahertz in CMOS / K.K. O, S. Sankaran ... [et al.] -- The effects of increasing AlN mole fraction on the performance of AlGaN active regions containing nanometer scale compositionally inhomogeneities / A.V. Sampath ... [et al.] -- Surface acoustic wave propagation in GaN-On-sapphire under pulsed sub-band ultraviolet illumination / V.S. Chivukula ... [et al.] -- Solar-blind single-photon 4H-SiC avalanche photodiodes / A. Vert ... [et al.] -- Monte Carlo simulations of In[symbol]Ga[symbol]As MOSFETs at 0.5 V supply voltage for high-performance CMOS / J.S. Ayubi-Moak, K. Kalna and A. Asenov -- The first 70nm 6-inch GaAs PHEMT MMIC process / H. Karimy ... [et al.] -- High-performance 50-nm metamorphic high electron-mobility transistors with high breakdown voltages / D. Xu ... [et al.] -- MBE growth and characterization of Mg-doped III-nitrides on sapphire / X. Chen ... [et al.] -- Performance of MOSFETs on reactive-ion-etched GaN surfaces / K. Tang, W. Huang, T.P. Chow -- High current density/high voltage AlGaN/GaN HFETs on sapphire / J. Shi, M. Pophristic and L.F. Eastman -- InAlN/GaN MOS-HEMT with thermally grown oxide / M. Alomari ... [et al.] -- GaN transistors for power switching and millimeter-wave applications / T. Ueda ... [et al.] -- 4-nm AlN barrier all binary HFET with SiNx gate dielectric / T. Zimmermann ... [et al.] -- Effect of gate oxide processes on 4H-SiC MOSFETs on (000-1) oriented substrate / H. Naik, K. Tang and T.P. Chow -- Characterization and modeling of integrated diode in 1.2kV 4H-SiC vertical power MOSFET / H. Naik, Y. Wang and T.P. Chow -- Packaging and wide-pulse switching of 4 mm x 4 mm silicon carbide GTOs / H. O'Brien and M.G. Koebke -- Bi-directional scalable solid-state circuit breakers for hybrid-electric vehicles / D.P. Urciuoli and V. Veliadis."@en
schema:description"Advanced High Speed Devices covers five areas of advanced device technology : terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback."@en
schema:exampleOfWork<http://worldcat.org/entity/work/id/417374847>
schema:genre"Electronic books."@en
schema:genre"Conference proceedings"@en
schema:inLanguage"en"
schema:name"Advanced high speed devices"@en
schema:numberOfPages"192"
schema:publisher
schema:url<http://site.ebrary.com/id/10422511>
schema:url
schema:url<http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=340652>
schema:url<http://ebooks.worldscinet.com/ISBN/9789814287876/9789814287876.html>
schema:workExample

Content-negotiable representations

Close Window

Please sign in to WorldCat 

Don't have an account? You can easily create a free account.