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Advanced theory of semiconductor devices

Author: Karl Hess
Publisher: New York : IEEE Press, ©2000.
Edition/Format:   Print book : EnglishView all editions and formats
Summary:
"This book is written for engineers, graduate students, and research scientists in solid-state electronics who want to gain a better understanding of the principles underlying semiconductor devices."--Jacket.
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Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: Karl Hess
ISBN: 0780334795 9780780334793
OCLC Number: 42039075
Description: xv, 332 pages : illustrations ; 24 cm
Contents: A Brief Review of the Basic Equations --
The Equations of Classical Mechanics, Application to Lattice Vibrations --
The Equations of Quantum Mechanics --
The Symmetry of the Crystal Lattice --
Crystal Structures of Silicon and GaAs --
Elements of Group Theory --
Point Group --
Translational Invariance --
Bragg Reflection --
The Theory of Energy Bands in Crystals --
Coupling Atoms --
Energy Bands by Fourier Analysis --
Equations of Motion in a Crystal --
Maxima of Energy Bands--Holes --
Summary of Important Band-Structure Parameters --
Band Structure of Alloys --
Imperfections of Ideal Crystal Structure --
Shallow Impurity Levels--Dopants --
Deep Impurity Levels --
Dislocations, Surfaces, and Interfaces --
Equilibrium Statistics for Electrons and Holes --
Density of States --
Probability of Finding Electrons in a State --
Electron Density in the Conduction Band --
Self-Consistent Potentials and Dielectric Properties --
Screening and the Poisson Equation in One Dimension --
Self-Consistent Potentials and the Dielectric Function --
Scattering Theory --
General Considerations--Drude Theory --
Scattering Probability from the Golden Rule --
Impurity Scattering --
Phonon Scattering --
Scattering by a [delta]-Shaped Potential --
Important Scattering Mechanisms in Silicon and Gallium Arsenide --
The Boltzmann Transport Equation --
Derivation --
Solutions of the Boltzmann Equation in the Relaxation Time Approximation --
Distribution Function and Current Density --
Effect of Temperature Gradients and Gradients of the Band Gap Energy.
Responsibility: Karl Hess.
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Abstract:

Semiconductor devices are ubiquitous in today's world and found increasingly in cars, kitchens, and electronic door looks, attesting to their presence in our daily lives. This comprehensive book  Read more...

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