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Advances in light emitting materials : special topic volume with invited papers only

Author: B Monemar; Martin Kittler; H G Grimmeiss
Publisher: Stafa-Zurich, Switzerland ; United Kingdom ; Enfield, NH : Trans Tech Publications, 2008.
Series: Materials science forum, v. 590.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Database:WorldCat
Summary:
This special-topic volume' Advances in Light-Emitting Materials', makes an important contribution to the field of silicon and III-nitride semiconductors. It begins with a brief history of visible-light emitting diodes. However, silicon is currently expanding from micro-electronics and into photonics. Due to its unsuitable band-gap, it has not previously been the material-of-choice for opto-electronic integration.  Read more...
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Advances in light emitting materials.
Stafa-Zurich, Switzerland ; United Kingdom ; Enfield, NH : Trans Tech Publications, 2008
(DLC) 2009417139
(OCoLC)261924542
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: B Monemar; Martin Kittler; H G Grimmeiss
ISBN: 9783038131632 3038131636
OCLC Number: 825768137
Description: 1 online resource (v, 278 pages) : illustrations.
Contents: Visible Light-Emitting Diodes --
The Formative Years --
Perspective on the Development of III-Nitrides for Optical Emitters --
Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters --
Dislocation Networks Formed by Silicon Wafer Direct Bonding --
Si- and SiGe-Based LEDs --
SOI-LEDs with Carrier Confinement --
MOS Light Emitting Devices Based on Rare-Earth Ion Implantation --
Present Status of Deep UV Nitride Light Emitters --
AlN and AlGaN by MOVPE for UV Light Emitting Devices --
Nonpolar and Semipolar Orientations: Material Growth and Properties --
Impact of Point Defects on the Luminescence Properties of (Al, Ga)N --
Assessment and Modification of Recombination Dynamics in In[subscript x]Ga[subscript 1-x]N-Based Quantum Wells.
Series Title: Materials science forum, v. 590.
Responsibility: edited by Bo Monemar, Martin Kittler, Hermann Grimmeiss.

Abstract:

This special-topic volume' Advances in Light-Emitting Materials', makes an important contribution to the field of silicon and III-nitride semiconductors. It begins with a brief history of visible-light emitting diodes. However, silicon is currently expanding from micro-electronics and into photonics. Due to its unsuitable band-gap, it has not previously been the material-of-choice for opto-electronic integration. That is now beginning to change and silicon devices have been developed which have the capability to emit, modulate, guide and detect light and which can be combined with microelectro.

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