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Analysis and Simulation of Semiconductor Devices

Author: Siegfried Selberherr
Publisher: Vienna : Springer Vienna, 1984.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Database:WorldCat
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Genre/Form: Electronic books
Additional Physical Format: Printed edition:
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Siegfried Selberherr
ISBN: 9783709187524 3709187524 9783709187548 3709187540
OCLC Number: 840303011
Description: 1 online resource
Contents: 1. Introduction --
1.1 The Goal of Modeling --
1.2 The History of Numerical Device Modeling --
1.3 References --
2. Some Fundamental Properties --
2.1 Poisson's Equation --
2.2 Continuity Equations --
2.3 Carrier Transport Equations --
2.4 Carrier Concentrations --
2.5 Heat Flow Equation --
2.6 The Basic Semiconductor Equations --
2.7 References --
3. Proeess Modeling --
3.1 Ion Implantation --
3.2 Diffusion --
3.3 Oxidation --
3.4 References --
4. The Physical Parameters --
4.1 Carrier Mobility Modeling --
4.2 Carrier Generation-Recombination Modeling --
4.3 Thermal Conductivity Modeling --
4.4 Thermal Generation Modeling --
4.5 References --
5. Analytical Investigations About the Basic Semiconductor Equations --
5.1 Domain and Boundary Conditions --
5.2 Dependent Variables --
5.3 The Existence of Solutions --
5.4 Uniqueness or Non-Uniqueness of Solutions --
5.5 Sealing --
5.6 The Singular Perturbation Approach --
5.7 Referenees --
6. The Diseretization of the Basic Semiconductor Equations --
6.1 Finite Differences --
6.2 Finite Boxes --
6.3 Finite Elements --
6.4 The Transient Problem --
6.5 Designing a Mesh --
6.6 Referenees --
7. The Solution of Systems of Nonlinear Algebraic Equations --
7.1 Newton's Method and Extensions --
7.2 Iterative Methods --
7.3 Referenees --
8. The Solution of Sparse Systems of Linear Equations --
8.1 Direct Methods --
8.2 Ordering Methods --
8.3 Relaxation Methods --
8.4 Alternating Direction Methods --
8.5 Strongly Implicit Methods --
8.6 Convergence Acceleration of Iterative Methods --
8.7 Referenees --
9. A Glimpse on Results --
9.1 Breakdown Phenomena in MOSFET's --
9.2 The Rate Effect in Thyristors --
9.3 Referenees --
Author Index --
Table Index.
Responsibility: by Siegfried Selberherr.

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