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Borophosphosilicate glass thin films in electronics

Author: V I︠U︡ Vasilʹev
Publisher: Hauppauge, New York, NY : Nova Science Publishers, Inc., [2013] ©2013
Series: Electronics and telecommunications research; Materials science and technologies series.
Edition/Format:   eBook : Document : EnglishView all editions and formats
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Tonkie sloi borofosforosilikatnogo stekla v tekhnologii kremnievoĭ mikroėlektroniki. English.
Borophosphosilicate glass thin films in electronics.
Hauppauge, New York : Nova Science Publishers, Inc., [2013]
(DLC) 2013002527
(OCoLC)840937559
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: V I︠U︡ Vasilʹev
ISBN: 9781626180345 1626180342
OCLC Number: 854583694
Language Note: Text in English.
Notes: Translation of: Tonkie sloi borofosforosilikatnogo stekla v tekhnologii kremnievoĭ mikroėlektroniki.
Description: 1 online resource (263 pages).
Contents: BOROPHOSPHOSILICATE GLASS THIN FILMS IN ELECTRONICS ; Library of Congress Cataloging-in-Publication Data ; CONTENTS ; PREFACE ; LIST OF ABBREVIATIONS (IN ORDER OF APPEARANCE) ; LIST OF IMPORTANT SYMBOLS (IN ORDER OF APPEARANCE); INTRODUCTION ; PART 1. BPSG THIN FILM DEPOSITION; Chapter 1 BRIEF HISTORICAL OVERVIEW OF BPSG THIN FILM RESEARCH ; Chapter 2 BASIC BPSG FILM CVD TOOLS AND METHODOLOGY ; 2.1. CVD PROCESS COMPOUNDS ; 2.2. BASIC CVD TOOL DESIGN FOR SILICON DIOXIDE AND GLASS FILM DEPOSITION ; 2.3. SOME BASIC THIN FILM CVD PROCESS PARAMETERS. Chapter 3 BASIC BPSG CVD KINETIC FEATURES 3.1. BASIC THIN FILM CVD KINETIC FEATURES ; 3.2. BASIC SILICON DIOXIDE THIN FILM CVD KINETIC FEATURES ; 3.3. BASIC SILICATE GLASS THIN FILM CVD KINETIC FEATURES ; 3.4. BASIC AEROSOL FORMATION FEATURES AT GLASS CVD ; Chapter 4 AS-DEPOSITED BPSG FILM STEP COVERAGE AND GAP-FILL ; 4.1. BASIC DEFINITIONS OF STEPPED DEVICE STRUCTURES ; 4.2. BASIC DEFINITIONS FOR THIN FILM CVD ON STEPPED DEVICE STRUCTURES ; 4.3. CHARACTERIZATION OF CVD PROCESSES ON STEPPED STRUCTURES ; 4.4. IMPROVEMENT OF GLASS FILM CVD ON STEPPED STRUCTURES. Chapter 5 GLASS FILM CVD SCHEMES 5.1. GENERAL THIN FILM CVD PROCESS SCHEME ; 5.2. CVD THIN FILM DEPOSITION PROCESSES CLASSIFICATION ; 5.3. THIN FILM SIO AND SILICATE GLASS DEPOSITION PROCESSES SCHEMES 2; Chapter 6 BPSG FILM INDUSTRIAL CVD TECHNOLOGY ; FINAL REMARKS ON PART 1 ; PART 2. BPSG FILM COMPOSITION, STRUCTURE, AND PROPERTIES ; Chapter 7 BRIEF REVIEW ON BPSG THIN FILM ANALYSIS TECHNIQUES ; 7.1. ANALYTICAL METHODS OVERVIEW ; 7.2. FTIR METHOD IMPLEMENTATION BPSG FILM COMPOSITION ANALYSIS ; 7.3. LASER SCANNING METHOD ; 7.4. MICROSCOPY METHODS. 7.5. TOTAL CHARGE MAPPING METHODS 7.6. SECONDARY ION MASS SPECTROMETRY METHOD ; Chapter 8 BPSG FILM COMPOSITION ; Chapter 9 BPSG FILM STRUCTURE ; 9.1. BRIEF REVIEW OF SILICA STRUCTURE: BASICS AND TERMS ; 9.2. BRIEF REVIEW OF BORON OXIDE AND PHOSPHORUS OXIDE STRUCTURES ; 9.3. BPSG COMPOSITION AND STRUCTURE ; 9.4. DIFFERENCES IN BPSG COMPOSITION AND STRUCTURE ; Chapter 10 BASIC BPSG FILM PROPERTIES ; 10.1. SURFACE MORPHOLOGY OF THIN GLASS FILMS ; 10.2. FILM MECHANICAL STRESS ; 10.3. FILM DENSITY --
FILM POROSITY --
FILM SHRINKAGE ; 10.4. FILM WET ETCH RATE. 10.5. GETTERING PROPERTIES OF BPSG FILMS10.6. ELECTRICAL PROPERTIES OF BPSG FILMS ; 10.7. SUMMARIES OF BPSG FILM PROPERTIES FOR PRODUCTION PROCESSES ; Chapter 11 BPSG FILM FLOW CAPABILITY ; 11.1. BRIEF DESCRIPTION OF GLASS FLOW BASICS ; 11.2. GLASS STRUCTURE FEATURES AND GLASS FLOW CAPABILITY ; 11.3. APPLICATION OF BULK GLASS PARAMETERS TO GLASS THIN FILM ; Chapter 12 BPSG FILM --
AMBIENT MOISTURE INTERACTION ; 12.1. TECHNIQUE FOR ANALYSIS OF MOISTURE EFFECTS IN THIN GLASS FILMS ; 12.2. FILM-MOISTURE INTERACTION ; 12.3. DESCRIPTION OF MOISTURE ABSORPTION EFFECTS IN BPSG FILMS.
Series Title: Electronics and telecommunications research; Materials science and technologies series.
Other Titles: Tonkie sloi borofosforosilikatnogo stekla v tekhnologii kremnievoĭ mikroėlektroniki.
Responsibility: editor, Vladislav Yu. Vasilyev (Semiconductor Devices and Microelectronics Department, Radio Engineering, Electronics, and Physics Faculty, Novosibirsk State Technical University, Novosibirsk, Russia).

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