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Chemical beam epitaxy and related techniques

Author: J S Foord; G J Davies; W T Tsang
Publisher: Chichester ; New York : Wiley, ©1997.
Edition/Format:   Print book : EnglishView all editions and formats
Summary:

Chemical beam epitaxy is a method of growing semiconductor layers which has wide-ranging application in the international electronics and opto-electronic industries.

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Additional Physical Format: Online version:
Chemical beam epitaxy and related techniques.
Chichester ; New York : Wiley, ©1997
(OCoLC)605056814
Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: J S Foord; G J Davies; W T Tsang
ISBN: 0471967483 9780471967484
OCLC Number: 35742045
Description: xiv, 444 pages : illustrations ; 24 cm
Contents: Chemical beam epitaxy : an introduction / G.J. Davies, J.S. Foord, and W.T. Tsang --
Growth apparatus design and safety considerations / F. Alexandre and J.L. Benchimol --
Precursors for chemical beam epitaxy / D.A. Bohling --
Reaction mechanisms for III-V semiconductor growth by chemical beam epitaxy : physical origins of the growth kinetics and film purities observed / J.S. Foord --
Growth of GaAs-based devices by chemical beam epitaxy / C.R. Abernathy --
CBE InP-based materials and devices / W.T. Tsang and T.H. Chiu --
MOMBE of antimonides and growth model / H. Asahi --
Chemical beam epitaxy of widegap II-VI compound semiconductors / A. Yoshikawa --
Gas source molecular beam epitaxy of silicon and related materials / Y. Shiraki --
Gas source molecular beam epitaxy / L. Goldstein --
Dopants and dopant incorporation / T. Whitaker and T. Martin --
Selected are epitaxy / H. Heinecke and G.J. Davies --
Chemical beam etching / W.T. Tsang and T.H. Chiu --
Laser-assisted epitaxy / H. Sugiura.
Responsibility: edited by J.S. Foord, G.J. Davies, and W.T. Tsang.
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