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Compound semiconductor materials and devices

Author: Zhaojun Liu, (Electronics engineer); Tongde Huang; Qiang Li, (Electronics engineer); Xing Lu, (Electronics engineer); Xinbo Zou
Publisher: San Rafael, California : Morgan & Claypool Publishers, [2016]
Series: Synthesis lectures on emerging engineering technologies, #3.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and  Read more...
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Zhaojun Liu, (Electronics engineer); Tongde Huang; Qiang Li, (Electronics engineer); Xing Lu, (Electronics engineer); Xinbo Zou
ISBN: 9781627058537 1627058532
OCLC Number: 945166262
Description: 1 online resource (vii, 65 pages) : illustrations.
Contents: 1. Introduction --
2. GaN-based HEMTs and MOSHEMTs --
2.1 GaN MOSHEMT for RF applications --
2.2 Ultra-scaled-down device architecture --
2.3 Monolithic integration of GaN HEMT with LED --
3. III-V materials and devices --
3.1 III-V heterostructures for high electron mobility transistors --
3.2 III-V high-mobility channel MOSFETs --
3.3 Monolithic integration of III-V FETs on Si --
4. Summary --
References --
Authors' biographies.
Series Title: Synthesis lectures on emerging engineering technologies, #3.
Responsibility: Zhaojun Liu, Sun Yat-sen University, Tongde Huang, Hong Kong University of Science and Technology, Qiang Li, Hong Kong University of Science and Technology, Xing Lu, Xi’an Jiaotong University, Xinbo Zou, Hong Kong University of Science and Technology.
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Abstract:

Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book  Read more...

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