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Computer simulations of edge effects in a small-area mesa N-P junction diode : preprint

Author: J Appel; Bhushan Lal Sopori; N M Ravindra; National Renewable Energy Laboratory (U.S.)
Publisher: [Golden, Colo.] : National Renewable Energy Laboratory, [2009]
Series: Conference paper (National Renewable Energy Laboratory (U.S.)), NREL/CP-520-45002.
Edition/Format:   eBook : Document : English
Database:WorldCat
Summary:
The influence of edges on the performance of small-area solar cells is determined using a modified commercial, finite-element software package. The n+/p mesa device is modeled as having a sub-oxide layer on the edges, which acquires positive charges that result in development of an electric field within the device. Our computer simulations include generation/ recombination at the diode edges as well as the influence  Read more...
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Details

Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: J Appel; Bhushan Lal Sopori; N M Ravindra; National Renewable Energy Laboratory (U.S.)
OCLC Number: 311084625
Notes: Title from title screen (viewed February 27, 2009).
"February 2009."
"Presented at the Materials Research Society (MRS), Fall Meeting 2008, Boston, Massachusetts, December 1-5, 2008."
Description: 6 pages : digital, PDF file.
Details: Mode of access: Internet from the NREL web site. Address as of 5/19/09: http://www.nrel.gov/docs/fy09osti/45002.pdf; current access available via PURL.
Series Title: Conference paper (National Renewable Energy Laboratory (U.S.)), NREL/CP-520-45002.
Responsibility: J. Appel and B. Sopori, N.M. Ravindra.

Abstract:

The influence of edges on the performance of small-area solar cells is determined using a modified commercial, finite-element software package. The n+/p mesa device is modeled as having a sub-oxide layer on the edges, which acquires positive charges that result in development of an electric field within the device. Our computer simulations include generation/ recombination at the diode edges as well as the influence of light on the recombination characteristics of the edges. We present a description of our model, dark and illuminated characteristics of devices with various surface charge concentrations, and the dynamics of carrier generation/recombination. The influence of edge geometry on diode performance is determined.

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