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Correlations of capacitance-voltage hysteresis with thin-film CdTe solar cell performance during accelerated lifetime testing

Author: David S Albin; J A del Cueto; National Renewable Energy Laboratory (U.S.)
Publisher: [Golden, CO] : National Renewable Energy Laboratory, [2011]
Series: Conference paper (National Renewable Energy Laboratory (U.S.)), NREL/CP-5200-47761.
Edition/Format:   eBook : Document : National government publication : English
Summary:
In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different premeasurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of  Read more...
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Material Type: Document, Government publication, National government publication, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: David S Albin; J A del Cueto; National Renewable Energy Laboratory (U.S.)
OCLC Number: 707936160
Notes: Title from title screen (viewed March 21, 2011).
"March 2011."
"Presented at the 2010 IEEE International Reliability Physics Symposium (IRPS), Garden Grove, California, May 2-6, 2010."
Description: 1 online resource (5 pages) : illustrations.
Details: Full text available via Internet in .pdf format. Adobe Acrobat Reader required.
Series Title: Conference paper (National Renewable Energy Laboratory (U.S.)), NREL/CP-5200-47761.
Other Titles: Correlations of capacitance voltage hysteresis with thin film cadmium telluride solar cell performance
Responsibility: David Albin and Joseph del Cueto.

Abstract:

In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different premeasurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

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