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Current trends in heterojunction bipolar transistors

Author: M F Chang
Publisher: Singapore ; River Edge, NJ : World Scientific, ©1996.
Series: Selected topics in electronics and systems, vol. 2.
Edition/Format:   Print book : EnglishView all editions and formats
Database:WorldCat
Summary:

This volume in a series examining current topics in electronics and systems presents essays discussing heterojunction bipolar devices.

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Document Type: Book
All Authors / Contributors: M F Chang
ISBN: 9810220979 9789810220976
OCLC Number: 34614557
Description: xiv, 421 pages : illustrations ; 26 cm.
Contents: HBT overview, scaling and integration with other devices, P. Asbeck and F. Chang; AlGaAs/GaAs HBT for analog and digital applications, K.C. Wang et al; HBTs for microwave power applications, B. Bayraktaroglu and A. Higgins; ballistic collector transistor (BCT) and its impact on high speed circuits, T. Ishibashi and Y. Yamauchi; InP HBTs for high speed and low power circuit applications, W. Stanchina; recent development in InGaP HBTs, W. Liu; SiGe HBTs - device, fabrication and circuit applications, B. Meyerson; noise characteristics of HBTs, Y.K. Chen; GaAs HBT reliability, H. Sugahara.
Series Title: Selected topics in electronics and systems, vol. 2.
Responsibility: editor, M.F. Chang.

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