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Deep centers in semiconductors : a state-of-the-art approach

Author: Sokrates T Pantelides
Publisher: Yverdon, Switzerland ; Philadelphia, Pa., U.S.A. : Gordon and Breach Science Publishers, 1992.
Edition/Format:   Print book : English : 2nd edView all editions and formats
Database:WorldCat
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Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: Sokrates T Pantelides
ISBN: 2881245625 9782881245626
OCLC Number: 25916061
Description: xv, 928 pages : illustrations ; 24 cm
Contents: Perspectives in the past, present and future of deep centers in semiconductors / S.T. Pantelides --
Chalcogen impurities in silicon / H.G. Grimmeiss and E. Janzén --
The lattice vacancy in silicon / G.D. Watkins --
Oxygen and oxygen associates in gallium phosphide and related semiconductors / P.J. Dean --
Oxygen in gallium arsenide / M. Skowronski --
The two dominant recombination centers in n-type gallium phosphide / A.R. Peaker and B. Hamilton --
The mid-gap donor level EL2 in gallium arsenide / G.M. Martin and S. Makram-Ebeid --
The mid-gap donor level EL2 in gallium arsenide : recent develops / G.A. Baraff --
DX centers in III-V alloys / D.V. Lang --
DX centers in III-V alloys : recent developments / P.M. Mooney --
Iron impurity centers in III-V semiconductors / S.G. Bishop --
Chromium in gallium arsenide / J.W. Allen --
Chromium in II-VI compounds / J.M. Baranowski. The optoelectronic properties of copper in zinc-cation II-VI compound semiconductors / D.J. Robbins [and others] --
Hydrogen in crystalline semiconductors / Chris G. Van de Walle.
Responsibility: edited by Sokrates T. Pantelides.
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