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Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.

Author: S Ashok
Publisher: Warrendale, Pa. : Materials Research Society, ©2002.
Series: Materials Research Society symposia proceedings, v. 719.
Edition/Format:   Print book : Conference publication : EnglishView all editions and formats
Database:WorldCat
Summary:

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

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Genre/Form: Conference papers and proceedings
San Francisco (Calif., 2002)
Congresses
Additional Physical Format: Online version:
Defect and impurity engineered semiconductors and devices III.
Warrendale, Pa. : Materials Research Society, ©2002
(OCoLC)714736254
Material Type: Conference publication
Document Type: Book
All Authors / Contributors: S Ashok
ISBN: 1558996559 9781558996557
OCLC Number: 50252040
Description: xv, 493 pages : illustrations ; 24 cm.
Contents: Materials Research Society Symposium Proceedings --
High Doped p-Typed GaN Grown by Alternative Co-Doping Technique / Souhachi Iwai, Hideki Hirayama and Yoshinobu Aoyagi --
Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl[subscript 4] Dopant Source / Rob Armitage, Qing Yang, Henning Feick, Yeonjoon Park and Eicke R. Weber --
Microstructure and Optical Properties of GaN Films Grown on Porous SiC Substrate by MBE / F. Yun, M.A. Reshchikov, L. He, T. King, D. Huang, H. Morkoc, C.K. Inoki and T.S. Kuan.
Series Title: Materials Research Society symposia proceedings, v. 719.
Responsibility: editors, S. Ashok [and others].

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