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Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.

Author: Tomas Diaz de la Rubia
Publisher: Pittsburgh, Pa. : Materials Research Society, ©1997.
Series: Materials Research Society symposia proceedings, v. 469.
Edition/Format:   Print book : Conference publication : EnglishView all editions and formats
Database:WorldCat
Summary:

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

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Genre/Form: Conference papers and proceedings
San Francisco (Calif., 1997)
Congresses
Material Type: Conference publication
Document Type: Book
All Authors / Contributors: Tomas Diaz de la Rubia
ISBN: 1558993738 9781558993730
OCLC Number: 37457922
Description: xv, 541 pages : illustrations ; 24 cm.
Contents: Defects and Diffusion Issues for the Manufacturing of Semiconductors in the 21st Century / J.D. Plummer --
Point Defects, Diffusion, and Gettering in Silicon / U. Gosele, D. Conrad and P. Werner [and others] --
Diffusion of Gold into Heavily Boron-Doped Silicon / H. Bracht and A. Rodriguez Schachtrup --
Nonhydrostatic Stress Effects on Boron Diffusion in Si / Michael J. Aziz --
Point Defect Properties From Metal Diffusion Experiments --
What Does the Data Really Tell Us? / Srinivasan Chakravarthi and Scott T. Dunham --
Room-Temperature Migration of Ion-Implanted Baron in Silicon / E.J.H. Collart, K. Weemers and D.J. Gravesteijn [and others].
Series Title: Materials Research Society symposia proceedings, v. 469.
Responsibility: editors, Tomas Diaz de la Rubia [and others].
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