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Doping in III-V semiconductors

Author: E Fred Schubert
Publisher: Cambridge [England] ; New York, NY, USA : Cambridge University Press, 1993.
Series: Cambridge studies in semiconductor physics and microelectronic engineering, 1.
Edition/Format:   Print book : EnglishView all editions and formats
Summary:

This is the first book to describe thoroughly the many facets of doping in compound semiconductors.

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Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: E Fred Schubert
ISBN: 0521419190 9780521419192
OCLC Number: 26973975
Description: xxii, 606 pages : illustrations ; 24 cm.
Contents: 1. Shallow impurities --
1.1. Hydrogenic impurities --
1.2. Screening of impurity potentials --
1.3. High doping effects --
2. Phenomenology of deep levels --
2.1. General characteristics --
2.2. Capture, emission, and recombination --
2.3. Effects relating to experimental properties --
3. Semiconductor statistics --
3.1. Density of continuum states --
3.2. Classical and quantum statistics --
3.3. Carrier concentrations --
3.4. Law of mass action --
4. Growth technologies --
4.1. Molecular-beam epitaxy --
4.2. Gas-source molecular-beam epitaxy --
4.3. Chemical-beam epitaxy --
4.4. Organometallic vapor-phase epitaxy --
4.5. Vapor-phase epitaxy --
5. Doping with elemental sources --
5.1. Doping techniques and calibration --
5.2. Doping homogeneity and uniformity --
5.3. Elemental dopants --
6. Gaseous doping sources --
6.1. General considerations --
6.2. Doping homogeneity and uniformity --
6.3. Gaseous doping precursors --
7. Impurity characteristics --
7.1. Doping incorporation during growth --
7.2. Doping incorporation by implantation --
7.3. Doping incorporation by diffusion --
7.4. Amphotericity and autocompensation --
7.5. Maximum doping concentration --
8. Redistribution of impurities --
8.1. Diffusion and brownian motion --
8.2. Fickian diffusion --
8.3. Diffusion mechanisms --
8.4. Some specific impurities --
8.5. Surface segregations and surface migration --
8.6. Impurity-induced layer disordering --
9. Deep centers --
9.1. DX-type centers --
9.2. The EL2 defect --
9.3. Hydrogen --
9.4. Chromium, iron, and oxygen --
9.5. Rare-earth impurities --
10. Doping in heterostructures, quantum wells, and superlattices --
10.1. Selectively doped heterostructures --
10.2. Doping aspects of selectively doped heterostructures --
10.3. Doping superlattices --
10.4. Impurities in quantum wells and quantum barriers --
11. Delta doping --
11.1. Electronic structure --
11.2. Growth, localization, and redistribution --
11.3. Transport properties --
11.4. Electronic devices --
11.5. Optical devices --
12. Characterization techniques --
12.1. Electronic characterization techniques --
12.2. Optical characterization techniques --
12.3. Chemical and structural characterization techniques --
Appendix A: Properties of III-V semiconductors --
Appendix B: Constants and conversions.
Series Title: Cambridge studies in semiconductor physics and microelectronic engineering, 1.
Responsibility: E. Fred Schubert.
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"Fred Schubert has written a book that very nicely fills two roles: It serves as a reference volume for those of us who use III-V materials, and it provides enlightening explanations of interesting Read more...

 
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