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The drift diffusion equation and its applications in MOSFET modeling

Author: W Hänsch
Publisher: Wien ; New York : Springer-Verlag, ©1991.
Series: Computational microelectronics.
Edition/Format:   Print book : EnglishView all editions and formats
Summary:

Bridges the gap between phenomenological modelling and a microscopic approach, focusing primarily on MOSFET-related features. The material ranges from the derivation of the Boltzmann equation from  Read more...

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Additional Physical Format: Online version:
Hänsch, W. (Wilfried), 1950-
Drift diffusion equation and its applications in MOSFET modeling.
Wien ; New York : Springer-Verlag, ©1991
(OCoLC)555259983
Online version:
Hänsch, W. (Wilfried), 1950-
Drift diffusion equation and its applications in MOSFET modeling.
Wien ; New York : Springer-Verlag, ©1991
(OCoLC)608173217
Document Type: Book
All Authors / Contributors: W Hänsch
ISBN: 0387822224 9780387822228 3211822224 Springer-Verlag Wien New York 9783211822227 Springer-Verlag Wien New York
OCLC Number: 24175549
Notes: Spine title: The drift diffusion equation.
Description: xii, 271 pages : 95 illustrations ; 26 cm.
Contents: 1 Boltzmann's Equation.- 1.1 Introduction.- 1.2 Many-Body System in Equilibrium.- 1.2.1 Quantum Mechanics of Many-Body Systems.- 1.2.2 Green's Functions for Electrons.- 1.2.3 Self-Energy.- 1.2.4 Perturbation Theory.- 1.3 Non-Equilibrium Green's Functions.- 1.3.1 The Keldysh Formalism.- 1.3.2 Wigner and Boltzmann Equation.- References.- 2 Hydrodynamic Model.- 2.1 Introduction.- 2.2 Linear Response and Relaxation-Time Approximation.- 2.2.1 Linear Response.- 2.2.2 Low Field Mobility.- 2.2.3 Limits.- 2.3 Nonlinear Response and the Moment Method.- 2.3.1 Drifted Maxwellian.- 2.3.2 Moment Expansion of the Distribution Function.- 2.3.3 Two-Band System.- 2.4 Summary.- References.- 3 Carrier Transport in an Inversion Channel.- 3.1 Introduction.- 3.2 The Classical Limit ? ? 0.- 3.3 Surface Mobility.- References.- 4 High Energetic Carriers.- 4.1 Introduction.- 4.2 Impact Ionization Scattering Strength.- 4.3 Distribution Function.- 4.4 Impact Ionization Coefficient and Gate Oxide Injection.- 4.4.1 Impact Ionization Generation Rate.- 4.4.2 Gate Oxide Injection.- References.- 5 Degredation.- 5.1 Introduction.- 5.2 Analyzing a Degraded MOSFET.- 5.2.1 Electrical Characterization.- 5.2.2 Charge Pumping.- 5.3 The Degradation Process.- 5.3.1 Carrier Distributions in the Gate Oxide.- 5.3.2 Trap Equations.- References.- Appendix 1. Perturbation Theory and Diagram Technique.- Appendix 2. Inversion Channel Particle-Density Distribution in Equilibrium.- Author Index.
Series Title: Computational microelectronics.
Other Titles: Drift diffusion equation
Responsibility: W. Hänsch.

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Primary Entity

<http://www.worldcat.org/oclc/24175549> # The drift diffusion equation and its applications in MOSFET modeling
    a schema:CreativeWork, schema:Book ;
   library:oclcnum "24175549" ;
   library:placeOfPublication <http://dbpedia.org/resource/New_York_City> ; # New York
   library:placeOfPublication <http://id.loc.gov/vocabulary/countries/au> ;
   library:placeOfPublication <http://experiment.worldcat.org/entity/work/data/26510544#Place/wien> ; # Wien
   schema:about <http://experiment.worldcat.org/entity/work/data/26510544#Topic/simulation> ; # Simulation
   schema:about <http://experiment.worldcat.org/entity/work/data/26510544#Topic/mos_fet> ; # MOS-FET
   schema:about <http://id.worldcat.org/fast/1017619> ; # Metal oxide semiconductor field-effect transistors--Mathematical models
   schema:about <http://dewey.info/class/621.3815284/e20/> ;
   schema:about <http://experiment.worldcat.org/entity/work/data/26510544#Topic/metal_mathematical_models> ; # Metal--Mathematical models
   schema:about <http://experiment.worldcat.org/entity/work/data/26510544#Topic/metal_oxide_semiconductor_field_effect_transistors_mathematical_models> ; # Metal oxide semiconductor field-effect transistors--Mathematical models
   schema:about <http://experiment.worldcat.org/entity/work/data/26510544#Topic/drift> ; # Drift
   schema:about <http://experiment.worldcat.org/entity/work/data/26510544#Topic/mathematisches_modell> ; # Mathematisches Modell
   schema:about <http://experiment.worldcat.org/entity/work/data/26510544#Topic/halbleiterbauelement> ; # Halbleiterbauelement
   schema:alternateName "Drift diffusion equation" ;
   schema:bookFormat bgn:PrintBook ;
   schema:copyrightYear "1991" ;
   schema:creator <http://viaf.org/viaf/32240508> ; # Wilfried Hänsch
   schema:datePublished "1991" ;
   schema:exampleOfWork <http://worldcat.org/entity/work/id/26510544> ;
   schema:inLanguage "en" ;
   schema:isPartOf <http://worldcat.org/issn/0179-0307> ; # Computational microelectronics.
   schema:isSimilarTo <http://www.worldcat.org/oclc/608173217> ;
   schema:isSimilarTo <http://www.worldcat.org/oclc/555259983> ;
   schema:name "The drift diffusion equation and its applications in MOSFET modeling"@en ;
   schema:productID "24175549" ;
   schema:publication <http://www.worldcat.org/title/-/oclc/24175549#PublicationEvent/wien_new_york_springer_verlag_1991> ;
   schema:publisher <http://experiment.worldcat.org/entity/work/data/26510544#Agent/springer_verlag> ; # Springer-Verlag
   schema:workExample <http://worldcat.org/isbn/9783211822227> ;
   schema:workExample <http://worldcat.org/isbn/9780387822228> ;
   wdrs:describedby <http://www.worldcat.org/title/-/oclc/24175549> ;
    .


Related Entities

<http://dbpedia.org/resource/New_York_City> # New York
    a schema:Place ;
   schema:name "New York" ;
    .

<http://experiment.worldcat.org/entity/work/data/26510544#Agent/springer_verlag> # Springer-Verlag
    a bgn:Agent ;
   schema:name "Springer-Verlag" ;
    .

<http://experiment.worldcat.org/entity/work/data/26510544#Topic/halbleiterbauelement> # Halbleiterbauelement
    a schema:Intangible ;
   schema:name "Halbleiterbauelement"@en ;
    .

<http://experiment.worldcat.org/entity/work/data/26510544#Topic/mathematisches_modell> # Mathematisches Modell
    a schema:Intangible ;
   schema:name "Mathematisches Modell"@en ;
    .

<http://experiment.worldcat.org/entity/work/data/26510544#Topic/metal_mathematical_models> # Metal--Mathematical models
    a schema:Intangible ;
   schema:name "Metal--Mathematical models"@en ;
    .

<http://experiment.worldcat.org/entity/work/data/26510544#Topic/metal_oxide_semiconductor_field_effect_transistors_mathematical_models> # Metal oxide semiconductor field-effect transistors--Mathematical models
    a schema:Intangible ;
   schema:hasPart <http://id.loc.gov/authorities/subjects/sh85084065> ;
   schema:name "Metal oxide semiconductor field-effect transistors--Mathematical models"@en ;
    .

<http://id.worldcat.org/fast/1017619> # Metal oxide semiconductor field-effect transistors--Mathematical models
    a schema:Intangible ;
   schema:name "Metal oxide semiconductor field-effect transistors--Mathematical models"@en ;
    .

<http://viaf.org/viaf/32240508> # Wilfried Hänsch
    a schema:Person ;
   schema:birthDate "1950" ;
   schema:familyName "Hänsch" ;
   schema:givenName "Wilfried" ;
   schema:givenName "W." ;
   schema:name "Wilfried Hänsch" ;
    .

<http://worldcat.org/isbn/9780387822228>
    a schema:ProductModel ;
   schema:isbn "0387822224" ;
   schema:isbn "9780387822228" ;
    .

<http://worldcat.org/isbn/9783211822227>
    a schema:ProductModel ;
   schema:isbn "3211822224" ;
   schema:isbn "9783211822227" ;
    .

<http://worldcat.org/issn/0179-0307> # Computational microelectronics.
    a bgn:PublicationSeries ;
   schema:hasPart <http://www.worldcat.org/oclc/24175549> ; # The drift diffusion equation and its applications in MOSFET modeling
   schema:issn "0179-0307" ;
   schema:name "Computational microelectronics." ;
   schema:name "Computational microelectronics," ;
    .

<http://www.worldcat.org/oclc/555259983>
    a schema:CreativeWork ;
   rdfs:label "Drift diffusion equation and its applications in MOSFET modeling." ;
   schema:description "Online version:" ;
   schema:isSimilarTo <http://www.worldcat.org/oclc/24175549> ; # The drift diffusion equation and its applications in MOSFET modeling
    .

<http://www.worldcat.org/oclc/608173217>
    a schema:CreativeWork ;
   rdfs:label "Drift diffusion equation and its applications in MOSFET modeling." ;
   schema:description "Online version:" ;
   schema:isSimilarTo <http://www.worldcat.org/oclc/24175549> ; # The drift diffusion equation and its applications in MOSFET modeling
    .


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