skip to content
Effect of disorder and defects in ion-implanted semiconductors : electrical and physicochemical characterization Preview this item
ClosePreview this item
Checking...

Effect of disorder and defects in ion-implanted semiconductors : electrical and physicochemical characterization

Author: Gérard Ghibaudo; Constantinos Christofides
Publisher: San Diego : Academic Press, ©1997.
Series: Semiconductors and semimetals, v. 45.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Database:WorldCat
Summary:
Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the  Read more...
Rating:

(not yet rated) 0 with reviews - Be the first.

Subjects
More like this

 

Find a copy in the library

&AllPage.SpinnerRetrieving; Finding libraries that hold this item...

Details

Genre/Form: Electronic books
Additional Physical Format: Print version:
Effect of disorder and defects in ion-implanted semiconductors.
San Diego : Academic Press, ©1997
(OCoLC)36933610
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Gérard Ghibaudo; Constantinos Christofides
ISBN: 9780080864426 0080864422 0127521453 9780127521459 1281715514 9781281715517
OCLC Number: 289171465
Reproduction Notes: Electronic reproduction. [S.l.] : HathiTrust Digital Library, 2010. MiAaHDL
Description: 1 online resource (xix, 300 pages) : illustrations.
Details: Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002.
Contents: Front Cover; Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physicochemical Characterization; Copyright Page; Contents; List of Contributors; Foreword; Preface; Chapter 1. Ion Implantation into Semiconductors: Historical Perspectives; I. Introduction; II. Early History; III. Ion Implanters; IV. Metal-Oxide Semiconductor Devices; V. Bipolar Devices; VI. Conclusions; References; Chapter 2. Electronic Stopping Power for Energetic Ions in Solids; I. Introduction; II. General Theory; III. Electronic Stopping Power for Protons. IV. Electronic Stopping Power for Heavy IonsV. Electronic Stopping Power for Molecular Ions; VI. Summary; References; Chapter 3. Solid Effect on the Electronic Stopping of Crystalline Target and Application to Range Estimation; I. Introduction; II. Local Density Approximation for Binary Collision; III. Impact Parameter-Dependence of the Electronic Stopping Power in Crystalline Solids; IV. Electronic Stopping Power of Chemical Compounds; V. Electronic Stopping Power and Range Profiles via Computer Simulations; VI. Concluding Remarks; References. Chapter 4. Ion Beams in Amorphous Semiconductor ResearchI. Introduction; II. Ion Beam Production of Amorphous Silicon; III. Ion Beam Doping of Plasma-Deposited Amorphous Silicon; IV. Structural and Configurational Changes in Amorphous Silicon; References; Chapter 5. Sheet and Spreading Resistance Analysis of Ion Implanted and Annealed Semiconductors; I. Introduction; II. Sheet Resistance Measurement; III. Spreading Resistance Probes Profiling; IV. Applications; V. Summary; References; Chapter 6. Studies of the Stripping Hall Effect in Ion-Implanted Silicon; I. Introduction. II. Survey of Basic TheoryIII. Applications of the Technique; IV. Conclusions; References; Chapter 7. Transmission Electron Microscopy Analyses; I. Introduction; II. Transmission Electron Microscopy; III. Defects Produced by Ion Implantation, Transmission Electron Microscopy; IV. Implantation Using Molecular Ions; V. Implantation Conditions Inhibiting the Formation of End-of-Range Defects; VI. Material Modification by Ion Beam Synthesis; VII. Ion-Beam-Induced Epitaxial Crystallization; VIII. Closing Remarks; References. Chapter 8. Rutherford Backscattering Studies of Ion Implanted SemiconductorsI. Introduction; II. Measurement of Disorder Depth Profiles by RBS-Channeling; III. Typical Results for Silicon and Silicon Carbide; References; Chapter 9. X-ray Diffraction Techniques; I. Introduction; II. Basic Aspects of Crystal Lattice Modification Due to Ion-Implantation; III. X-ray Methods to Analyze Implanted Samples; IV. Examples of Special Applications; V. Summary; References; Index; Contents of Volumes in This Series.
Series Title: Semiconductors and semimetals, v. 45.
Responsibility: volume editors, Gérard Ghibaudo, Constantinos Christofides.

Abstract:

Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It  Read more...

Reviews

User-contributed reviews
Retrieving GoodReads reviews...
Retrieving DOGObooks reviews...

Tags

Be the first.
Confirm this request

You may have already requested this item. Please select Ok if you would like to proceed with this request anyway.

Linked Data


Primary Entity

<http://www.worldcat.org/oclc/289171465> # Effect of disorder and defects in ion-implanted semiconductors : electrical and physicochemical characterization
    a schema:CreativeWork, schema:MediaObject, schema:Book ;
   library:oclcnum "289171465" ;
   library:placeOfPublication <http://id.loc.gov/vocabulary/countries/cau> ;
   library:placeOfPublication <http://experiment.worldcat.org/entity/work/data/3373124024#Place/san_diego> ; # San Diego
   schema:about <http://experiment.worldcat.org/entity/work/data/3373124024#Topic/electricity> ; # Electricity
   schema:about <http://id.worldcat.org/fast/1112198> ; # Semiconductors
   schema:about <http://dewey.info/class/537.622/e22/> ;
   schema:about <http://experiment.worldcat.org/entity/work/data/3373124024#Topic/science_physics_electricity> ; # SCIENCE--Physics--Electricity
   schema:about <http://id.worldcat.org/fast/1112274> ; # Semimetals
   schema:bookFormat schema:EBook ;
   schema:contributor <http://viaf.org/viaf/36406633> ; # Gérard Ghibaudo
   schema:contributor <http://viaf.org/viaf/165187151> ; # Constantinos Christofides
   schema:copyrightYear "1997" ;
   schema:datePublished "1997" ;
   schema:description "Front Cover; Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physicochemical Characterization; Copyright Page; Contents; List of Contributors; Foreword; Preface; Chapter 1. Ion Implantation into Semiconductors: Historical Perspectives; I. Introduction; II. Early History; III. Ion Implanters; IV. Metal-Oxide Semiconductor Devices; V. Bipolar Devices; VI. Conclusions; References; Chapter 2. Electronic Stopping Power for Energetic Ions in Solids; I. Introduction; II. General Theory; III. Electronic Stopping Power for Protons."@en ;
   schema:description "Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Key Features * Provides basic knowledge of ion implantation-induced defects * Focuses on physical mechanisms of defect annealing * Utilizes electrical and physico-chemical characterization tools for processed semiconductors * Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination."@en ;
   schema:exampleOfWork <http://worldcat.org/entity/work/id/3373124024> ;
   schema:genre "Electronic books"@en ;
   schema:inLanguage "en" ;
   schema:isPartOf <http://experiment.worldcat.org/entity/work/data/3373124024#Series/semiconductors_and_semimetals> ; # Semiconductors and semimetals ;
   schema:isSimilarTo <http://www.worldcat.org/oclc/36933610> ;
   schema:name "Effect of disorder and defects in ion-implanted semiconductors : electrical and physicochemical characterization"@en ;
   schema:productID "289171465" ;
   schema:publication <http://www.worldcat.org/title/-/oclc/289171465#PublicationEvent/san_diego_academic_press_1997> ;
   schema:publisher <http://experiment.worldcat.org/entity/work/data/3373124024#Agent/academic_press> ; # Academic Press
   schema:url <http://public.eblib.com/choice/publicfullrecord.aspx?p=405269> ;
   schema:url <http://www.sciencedirect.com/science/bookseries/00808784/45> ;
   schema:url <http://www.sciencedirect.com/science/book/9780127521459> ;
   schema:url <http://www.myilibrary.com?id=171551> ;
   schema:url <http://www.myilibrary.com?id=171551&ref=toc> ;
   schema:url <http://catalog.hathitrust.org/api/volumes/oclc/36933610.html> ;
   schema:url <http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=241872> ;
   schema:url <http://site.ebrary.com/id/10239721> ;
   schema:workExample <http://worldcat.org/isbn/9781281715517> ;
   schema:workExample <http://worldcat.org/isbn/9780080864426> ;
   schema:workExample <http://worldcat.org/isbn/9780127521459> ;
   wdrs:describedby <http://www.worldcat.org/title/-/oclc/289171465> ;
    .


Related Entities

<http://experiment.worldcat.org/entity/work/data/3373124024#Series/semiconductors_and_semimetals> # Semiconductors and semimetals ;
    a bgn:PublicationSeries ;
   schema:hasPart <http://www.worldcat.org/oclc/289171465> ; # Effect of disorder and defects in ion-implanted semiconductors : electrical and physicochemical characterization
   schema:name "Semiconductors and semimetals ;" ;
    .

<http://experiment.worldcat.org/entity/work/data/3373124024#Topic/science_physics_electricity> # SCIENCE--Physics--Electricity
    a schema:Intangible ;
   schema:name "SCIENCE--Physics--Electricity"@en ;
    .

<http://id.worldcat.org/fast/1112198> # Semiconductors
    a schema:Intangible ;
   schema:name "Semiconductors"@en ;
    .

<http://id.worldcat.org/fast/1112274> # Semimetals
    a schema:Intangible ;
   schema:name "Semimetals"@en ;
    .

<http://viaf.org/viaf/165187151> # Constantinos Christofides
    a schema:Person ;
   schema:familyName "Christofides" ;
   schema:givenName "Constantinos" ;
   schema:name "Constantinos Christofides" ;
    .

<http://viaf.org/viaf/36406633> # Gérard Ghibaudo
    a schema:Person ;
   schema:familyName "Ghibaudo" ;
   schema:givenName "Gérard" ;
   schema:name "Gérard Ghibaudo" ;
    .

<http://worldcat.org/isbn/9780080864426>
    a schema:ProductModel ;
   schema:isbn "0080864422" ;
   schema:isbn "9780080864426" ;
    .

<http://worldcat.org/isbn/9780127521459>
    a schema:ProductModel ;
   schema:isbn "0127521453" ;
   schema:isbn "9780127521459" ;
    .

<http://worldcat.org/isbn/9781281715517>
    a schema:ProductModel ;
   schema:isbn "1281715514" ;
   schema:isbn "9781281715517" ;
    .

<http://www.worldcat.org/oclc/36933610>
    a schema:CreativeWork ;
   rdfs:label "Effect of disorder and defects in ion-implanted semiconductors." ;
   schema:description "Print version:" ;
   schema:isSimilarTo <http://www.worldcat.org/oclc/289171465> ; # Effect of disorder and defects in ion-implanted semiconductors : electrical and physicochemical characterization
    .

<http://www.worldcat.org/title/-/oclc/289171465>
    a genont:InformationResource, genont:ContentTypeGenericResource ;
   schema:about <http://www.worldcat.org/oclc/289171465> ; # Effect of disorder and defects in ion-implanted semiconductors : electrical and physicochemical characterization
   schema:dateModified "2017-09-03" ;
   void:inDataset <http://purl.oclc.org/dataset/WorldCat> ;
    .


Content-negotiable representations

Close Window

Please sign in to WorldCat 

Don't have an account? You can easily create a free account.