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Electric-field control of magnetization and electronic transport in ferromagnetic/ferroelectric heterostructures

Author: Sen Zhang
Publisher: Heidelberg ; New York : Springer, [2014]
Series: Springer theses
Edition/Format:   eBook : Document : EnglishView all editions and formats
Database:WorldCat
Summary:
This book mainly focuses on the investigation of the electric-field control of magnetism and spin-dependent transportation based on a Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) multiferroic heterostructure. Methods of characterization and analysis of the multiferroic properties with in situ electric fields are induced to detect the direct magnetoelectric (ME) coupling. A switchable and non-volatile electric  Read more...
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Details

Genre/Form: Electronic books
Additional Physical Format: Printed edition:
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Sen Zhang
ISBN: 9783642548390 3642548393 3642548385 9783642548383
OCLC Number: 876744036
Notes: "Doctoral thesis accepted by Tsinghua University, Beijing, China."
Description: 1 online resource.
Contents: Introduction --
Experimental Methods --
Electric-field control of Magnetism in CoFeB/PMN-PT(001) Structure.-Electric-Field Control of Magnetism and Magnetoresistance in CoFeB/PMN-PT(011) Structure --
Summary and Outlook.
Series Title: Springer theses
Responsibility: Sen Zhang.

Abstract:

This book mainly focuses on the investigation of the electric-field control of magnetism and spin-dependent transportation based on a Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) multiferroic heterostructure. Methods of characterization and analysis of the multiferroic properties with in situ electric fields are induced to detect the direct magnetoelectric (ME) coupling. A switchable and non-volatile electric field control of magnetization in CoFeB/PMN-PT(001) structures is observed at room temperature, and the mechanism of direct coupling between the ferroelectric domain and ferromagnetic film due to the combined action of 109° ferroelastic domain switching in PMN-PT and the absence of magnetocrystalline anisotropy in CoFeB is demonstrated. Moreover, the electric-field control of giant magnetoresistance is achieved in a CoFeB-based spin valve deposited on top of (011) oriented PMN-PT, which offers an avenue for implementing electric-writing and magnetic-reading random access memory at room temperature. Readers will learn the basic properties of multiferroic materials, many useful techniques related to characterizing multiferroics and the interesting ME effect in CoFeB/PMN-PT structures, which is significant for applications.

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