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Electrochemistry of silicon and its oxide

Author: Xiaoge Gregory Zhang
Publisher: New York : Kluwer Academic/Plenum Publishers, ©2001.
Edition/Format:   Print book : EnglishView all editions and formats
Summary:

It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological  Read more...

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Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: Xiaoge Gregory Zhang
ISBN: 0306465418 9780306465413
OCLC Number: 47216683
Description: xxvi, 510 pages : illustrations ; 26 cm
Contents: Ch. 1. Basic Theories of Semiconductor Electrochemistry. Energetics of Semiconductor/Electrolyte Interface. Potential and Charge Distribution in Space Charge Layer. Kinetics of Charge Transfer. Photoeffects. Open-Circuit Potential. Experimental Techniques --
Ch. 2. Silicon/Electrolyte Interface. Basic Properties of Silicon. Thermodynamic Stability in Aqueous Solutions. Surface Adsorption. Native Oxide. Hydrophobic and Hydrophilic Surfaces. Surface States. Flatband Potentials. Open-Circuit Potentials --
Ch. 3. Anodic Oxide. Types of Oxides. Formation of Anodic Oxides. Growth Mechanisms. Properties --
Ch. 4. Etching of Oxides. General. Thermal Oxide. Quartz and Fused Silica. Deposited Oxides. Anodic Oxides. Etching Mechanisms --
Ch. 5. Anodic Behavior. Current-Potential Relationship. Photoeffect. Effective Dissolution Valence. Hydrogen Evolution. Limiting Current. Impedance of Interface Layers. Tafel Slope and Distribution of Potential. Passivation.
Responsibility: Xiaoge Gregory Zhang.
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`Dr. Zhang provides an encyclopedic compilation of the literature on the many electrochemical effects that impact the processing of silicon and its native oxide. This book will be an important Read more...

 
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