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Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP

Author: Dragan M Pantic; Electrochemical Society.; United States. National Aeronautics and Space Administration.
Publisher: [Washington, D.C.] : NASA ; Springfield, Va. : For sale by the National Technical Information Service, [1990]
Series: NASA technical memorandum, 102544.
Edition/Format:   Book   Microform : National government publication : Microfiche : EnglishView all editions and formats
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Additional Physical Format: Online version:
Pantic, Dragan M.
Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP
(OCoLC)994303469
Material Type: Government publication, National government publication, Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: Dragan M Pantic; Electrochemical Society.; United States. National Aeronautics and Space Administration.
OCLC Number: 25060756
Notes: Cover title.
Reproduction Notes: Microfiche. [Washington, D.C. : National Aeronautics and Space Administration], 1990. 1 microfiche : negative.
Description: 15 pages : illustrations ; 28 cm.
Series Title: NASA technical memorandum, 102544.
Responsibility: Dragan M. Pantic [and others] ; presented at the Dielectric Films on Compound Semiconductors Symposium sponsored by the Electrochemical Society, Honolulu, Hawaii, October 18-23, 1987.

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