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Electron-Gated Ion Channels.

Author: Wilson Ralston
Publisher: Stevenage : The Institution of Engineering and Technology, 2005.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
Understanding ion channel gating has been a goal of researchers since Hodgkin and Huxley's classic publication in 1952, but the gating mechanism has remained elusive. In this book, it is shown how electrons can control gating. Introducing the electron as a gating agent requires amplification, but until now there has been no appropriate mechanism for amplification. The new approach to gating, based on the electron  Read more...
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Ralston, Wilson.
Electron-Gated Ion Channels.
Stevenage : The Institution of Engineering and Technology, ©2005
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Wilson Ralston
ISBN: 9781613531822 1613531826
OCLC Number: 854971735
Notes: 10-7. The first excited vibrational state.
Description: 1 online resource (206 pages)
Contents: Preface; Part I: Theory / Electron-Gated Ion Channels; 1. Introduction; 1-1. The electron-gating model; 1-2. Electron gating of a sodium channel; 1-3. Timing; 1-4. Sodium channel current; 1-5. Sensitivity; 1-6. Amplification and negative conductance; 1-7. Model parameters; 2. Developing A Model; 2-1. A single electron two-site model; 2-2. Amplification; 2-3. A small force constant; 2-4. Calculating frequencies; 2-5. Amplification by NH3 inversion resonance; 2-6. A voltage dependent amplification factor; 2-7. The amplification energy window; 2-8. NH3 inversion frequency reduction. 3. The SetCap Model3-1. A circuit model for two-site electron tunneling; 3-2. Defining a capacitance factor; 3-3. Displacement capacitance; 3-4. Time-constant capacitance; 3-5. Displacement energy; 3-6. Energy well depth; 3-7. The SETCAP model for N tunneling sites; 4. Amplified Electron Tunneling and the Inverted Region; 4-1. Amplification and the Marcus inverted region; 4-2. The Q10 temperature factor; 4-3. Time constant; 4-4. Contact resistance; 4-5. Tunneling resistance; 4-6. Electron tunneling site-selectivity; 4-7. The amplification energy window and the inverted region. 5. Gating and Distortion Factors5-1. Sodium channel inactivation gate leakage; 5-2. Ion channel gating; 5-3. Inactivation gating and open-gate distortion; 5-4. Sodium channel activation gates and distortion; 5-5. Potassium channel gating and distortion; 5-6. Edge distortion of inactivation gating; 5-7. Multistate gating; 6. Characterization and Validation; 6-1. Electron gating model equations; 6-2. Finite-range rate constants; 6-3. Open-channel probability range and time constant; 6-4. Rate curves using voltage-sensitive amplification; 7. Flux Gating In Na+ and K+ Channels. 7-1. Sodium channel flux gating7-2. Sodium channel inactivation flux gating; 7-3. Potassium channel flux gating; 7-4. The influx gating latch-up effect; 8. Far Sites, Near Sites, and Back Sites; 8-1. Ion channel mapping; 8-2. Far sites for inactivation, calcium signaling and memory; 8-3. Near sites on the S4; 8-4. Back sites and hyperpolarization; 8-5. Gating current; 8-6. Charge immobilization; 8-7. A calcium channel oscillator model using far sites; 9. Electron-Gate K+ Channels; 9-1. Activation and inactivation of Kv channels; 9-2. Structural constraints for activation gating. 9-3. Influx gating latch-up and TEA+sensitivity9-4. K/Na selectivity ratio; 9-5. C-type inactivation gating; 9-6. Coupling between tunnel-track electrons; 9-7. Kinetics and inactivation depend on far sites; Part II: Experimental Microwave Investigation; 10. Microwave Thermal Fluorescence Spectroscopy; 10-1. Microwave spectroscopy for caged proteins; 10-2. Microwave spectra for Blue Fluorescent Protein; 10-3. Matching frequencies; 10-4. Estimating parameters and sensitivity; 10-5. Arginine and lysine hot spots; 10-6. Calcium oscillators --
microwave sensitivity.

Abstract:

Understanding ion channel gating has been a goal of researchers since Hodgkin and Huxley's classic publication in 1952, but the gating mechanism has remained elusive. In this book, it is shown how electrons can control gating. Introducing the electron as a gating agent requires amplification, but until now there has been no appropriate mechanism for amplification. The new approach to gating, based on the electron and quantum mechanics, elucidates mechanisms important to cellular function and signaling. A greater understanding of the quantum-mechanical mechanisms and the role of the electron w.

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