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Emerging Resistive Switching Memories

Author: Jianyong Ouyang
Publisher: Cham : Springer International Publishing : Imprint : Springer, 2016.
Series: SpringerBriefs in materials.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
This brief describes how non-volatile change of the resistance, due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect  Read more...
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Genre/Form: Electronic books
Additional Physical Format: Printed edition:
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Jianyong Ouyang
ISBN: 9783319315720 3319315722 9783319315706 3319315706
OCLC Number: 961892272
Description: 1 online resource (VIII, 93 pages 73 illustrations, 41 illustrations in color. :) : online resource.
Contents: Introduction to history of memory devices and the present memory devices --
Introduction of resistive switches memory devices with nanoparticles --
Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode --
Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode --
Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles --
Mechanisms for resistive switches --
Application of the resistive switching devices with nanoparticles.
Series Title: SpringerBriefs in materials.
Responsibility: by Jianyong Ouyang.

Abstract:

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. He details how charge trapping,  Read more...

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