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A FORTRAN program for calculating the electrical parameters of extrinsic silicon

Author: R D Larrabee; W Robert Thurber; W Murray Bullis; United States. National Bureau of Standards.; Center for Electronics and Electrical Engineering (U.S.). Electron Devices Division.
Publisher: Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., 1980.
Series: Semiconductor measurement technology; NBS special publication, 400-63
Edition/Format:   Book : National government publication : EnglishView all editions and formats
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Additional Physical Format: Online version:
Larrabee, R. D.
FORTRAN program for calculating the electrical parameters of extrinsic silicon.
Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., 1980
(OCoLC)607058584
Material Type: Government publication, National government publication
Document Type: Book
All Authors / Contributors: R D Larrabee; W Robert Thurber; W Murray Bullis; United States. National Bureau of Standards.; Center for Electronics and Electrical Engineering (U.S.). Electron Devices Division.
OCLC Number: 7040743
Notes: "Electron Devices Division, Center for Electronics and Electrical Engineering, National Engineering Laboratory, National Bureau of Standards."
"Issued October 1980."
S/N 003-003-02260-8.
Item 247.
Description: iv, 48 p. ; 27 cm.
Series Title: Semiconductor measurement technology; NBS special publication, 400-63
Responsibility: R.D. Larrabee, W.R. Thurber, and W.M. Bullis.

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