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Full field birefringence measurement of grown-in stresses in thin silicon sheet : final technical report 2 January 2002-15 January 2008

Author: Steven S Danyluk; S Ostapenko; National Renewable Energy Laboratory (U.S.)
Publisher: Golden, Colo. : National Renewable Energy Laboratory, [2008]
Series: NREL/SR, 520-44237.
Edition/Format:   eBook : Document : National government publication : English
Summary:
The primary concern of this research was to develop fundamental knowledge about residual stresses and microcracks and defects in silicon sheet. During the work, two groups developed new experimental techniques to obtain shear stresses and microcracks in sheet silicon. One technique involves infrared photoelasticity, which measures the residual stress-induced birefringence. The residual stresses are related to the  Read more...
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Additional Physical Format: Danyluk, Steven S.
Full field birefringence measurement of grown-in stresses in thin silicon sheet
23 p.
(OCoLC)272405646
Material Type: Document, Government publication, National government publication, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Steven S Danyluk; S Ostapenko; National Renewable Energy Laboratory (U.S.)
OCLC Number: 316339870
Notes: Title from title screen (viewed on Mar. 19, 2009).
"November 2008."
Description: 23 pages : digital, PDF file.
Details: Mode of access: Internet from the NREL web site. Address as of 3/19/09: http://www.nrel.gov/docs/fy09osti/44237.pdf; current access available via PURL.
Series Title: NREL/SR, 520-44237.
Responsibility: S. Danyluk, S. Ostapenko.

Abstract:

The primary concern of this research was to develop fundamental knowledge about residual stresses and microcracks and defects in silicon sheet. During the work, two groups developed new experimental techniques to obtain shear stresses and microcracks in sheet silicon. One technique involves infrared photoelasticity, which measures the residual stress-induced birefringence. The residual stresses are related to the birefringence through the stress-optic coefficient described in this report. Anisotropy, thickness, and microstructure are some of the key parameters that affect birefringence, and these topics were investigated as they relate to in-plane residual stresses. In the experimental system developed at Georgia Tech, the anisotropy thickness and microstructure were accounted for by using a four-point bending technique, and were ultimately used to determine the principal stresses in silicon wafers. The work at the University of South Florida focused on using acoustic techniques (resonance ultrasonic vibrations) to determine the existence of microcracks - usually edge cracks - in thin silicon wafers.

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