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Fundamental aspects of ultrathin dielectrics on Si-based devices

Author: Eric L Garfunkel; E L Gusev; Alexander Vul'; North Atlantic Treaty Organization. Scientific Affairs Division.
Publisher: Dordrecht ; Boston : Kluwer Academic Publishers, ©1998.
Series: NATO science series., Partnership sub-series 3,, High technology ;, v. 47.
Edition/Format:   Print book : Conference publication : EnglishView all editions and formats
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Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8,  Read more...

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Genre/Form: Conference papers and proceedings
Sankt Petersburg (1997)
Congresses
Material Type: Conference publication, Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: Eric L Garfunkel; E L Gusev; Alexander Vul'; North Atlantic Treaty Organization. Scientific Affairs Division.
ISBN: 0792350073 9780792350071 0792350081 9780792350088
OCLC Number: 38409461
Notes: "Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997"--Title page verso.
"Published in cooperation with NATO Scientific Affairs Division."
Description: x, 507 pages : illustrations ; 25 cm.
Contents: Preface. Introduction. 1. Recent Advances in Experimental Studies of SiO2 Films on Si. 2. Theory of the SiO2/Si and SiOxNy/Si Systems. 3. Growth Mechanism, Processing, and Analysis of (Oxy)nitridation. 4. Initial Oxidation and Surface Science Issues. 5. Electrical Properties and Microscopic Models of Defects. 6. Hydrogen/Deuterium Issues. 7. New Substrates (SiC, SiGe) and SOI Technologies. Appendix. Authors Index. List of Workshop Participants.
Series Title: NATO science series., Partnership sub-series 3,, High technology ;, v. 47.
Responsibility: edited by Eric Garfunkel, Evgeni Gusev, and Alexander Vul'.
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