skip to content
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices Preview this item
ClosePreview this item
Checking...

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

Author: Eric Garfunkel; Evgeni Gusev; Alexander Vul'
Publisher: Dordrecht : Springer Netherlands : Imprint : Springer, 1998.
Series: NATO science series., Series 3,, High technology ;, 47.
Edition/Format:   eBook : Bibliographic data : EnglishView all editions and formats
Summary:
An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3  Read more...
Rating:

(not yet rated) 0 with reviews - Be the first.

Subjects
More like this

 

Find a copy online

Links to this item

Find a copy in the library

&AllPage.SpinnerRetrieving; Finding libraries that hold this item...

Details

Genre/Form: Electronic books
Additional Physical Format: Printed edition:
Material Type: Bibliographic data, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Eric Garfunkel; Evgeni Gusev; Alexander Vul'
ISBN: 9789401150088 9401150087 9780792350088 0792350081
OCLC Number: 840311043
Description: 1 online resource (520 pages).
Contents: Preface. Introduction. 1. Recent Advances in Experimental Studies of SiO2 Films on Si. 2. Theory of the SiO2/Si and SiOxNy/Si Systems. 3. Growth Mechanism, Processing, and Analysis of (Oxy)nitridation. 4. Initial Oxidation and Surface Science Issues. 5. Electrical Properties and Microscopic Models of Defects. 6. Hydrogen/Deuterium Issues. 7. New Substrates (SiC, SiGe) and SOI Technologies. Appendix. Authors Index. List of Workshop Participants.
Series Title: NATO science series., Series 3,, High technology ;, 47.
Other Titles: Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997
Responsibility: edited by Eric Garfunkel, Evgeni Gusev, Alexander Vul'.

Abstract:

Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8,  Read more...

Reviews

User-contributed reviews
Retrieving GoodReads reviews...
Retrieving DOGObooks reviews...

Tags

Be the first.

Similar Items

Related Subjects:(2)

Confirm this request

You may have already requested this item. Please select Ok if you would like to proceed with this request anyway.

Linked Data


Primary Entity

<http://www.worldcat.org/oclc/840311043> # Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
    a schema:Book, schema:CreativeWork ;
   library:oclcnum "840311043" ;
   library:placeOfPublication <http://experiment.worldcat.org/entity/work/data/41538090#Place/dordrecht> ; # Dordrecht
   library:placeOfPublication <http://id.loc.gov/vocabulary/countries/ne> ;
   rdfs:comment "Unknown 'gen' value: bdt" ;
   schema:about <http://dewey.info/class/620.11295/e23/> ;
   schema:about <http://id.worldcat.org/fast/1046768> ; # Optical materials
   schema:about <http://id.worldcat.org/fast/1139265> ; # Surfaces (Physics)
   schema:alternateName "Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997" ;
   schema:bookFormat schema:EBook ;
   schema:contributor <http://viaf.org/viaf/161234927> ; # Evgeni Gusev
   schema:contributor <http://viaf.org/viaf/166056899> ; # Alexander Vul'
   schema:creator <http://viaf.org/viaf/28584301> ; # Eric Garfunkel
   schema:datePublished "1998" ;
   schema:description "An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
"@en ;
   schema:exampleOfWork <http://worldcat.org/entity/work/id/41538090> ;
   schema:genre "Electronic books"@en ;
   schema:inLanguage "en" ;
   schema:isPartOf <http://experiment.worldcat.org/entity/work/data/41538090#Series/nato_science_series_3_high_technology_1388_6576> ; # NATO Science Series, 3. High Technology, 1388-6576 ;
   schema:isPartOf <http://experiment.worldcat.org/entity/work/data/41538090#Series/nato_science_series> ; # NATO science series.
   schema:isSimilarTo <http://worldcat.org/entity/work/data/41538090#CreativeWork/> ;
   schema:name "Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices"@en ;
   schema:productID "840311043" ;
   schema:publication <http://www.worldcat.org/title/-/oclc/840311043#PublicationEvent/dordrecht_springer_netherlands_imprint_springer_1998> ;
   schema:publisher <http://experiment.worldcat.org/entity/work/data/41538090#Agent/imprint> ; # Imprint
   schema:publisher <http://experiment.worldcat.org/entity/work/data/41538090#Agent/springer_netherlands> ; # Springer Netherlands
   schema:publisher <http://experiment.worldcat.org/entity/work/data/41538090#Agent/springer> ; # Springer
   schema:url <http://dx.doi.org/10.1007/978-94-011-5008-8> ;
   schema:url <http://link.springer.com/10.1007/978-94-011-5008-8> ;
   schema:workExample <http://dx.doi.org/10.1007/978-94-011-5008-8> ;
   schema:workExample <http://worldcat.org/isbn/9780792350088> ;
   schema:workExample <http://worldcat.org/isbn/9789401150088> ;
   wdrs:describedby <http://www.worldcat.org/title/-/oclc/840311043> ;
    .


Related Entities

<http://experiment.worldcat.org/entity/work/data/41538090#Agent/springer_netherlands> # Springer Netherlands
    a bgn:Agent ;
   schema:name "Springer Netherlands" ;
    .

<http://experiment.worldcat.org/entity/work/data/41538090#Series/nato_science_series> # NATO science series.
    a bgn:PublicationSeries ;
   schema:hasPart <http://www.worldcat.org/oclc/840311043> ; # Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
   schema:name "NATO science series." ;
    .

<http://experiment.worldcat.org/entity/work/data/41538090#Series/nato_science_series_3_high_technology_1388_6576> # NATO Science Series, 3. High Technology, 1388-6576 ;
    a bgn:PublicationSeries ;
   schema:hasPart <http://www.worldcat.org/oclc/840311043> ; # Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
   schema:name "NATO Science Series, 3. High Technology, 1388-6576 ;" ;
    .

<http://id.worldcat.org/fast/1046768> # Optical materials
    a schema:Intangible ;
   schema:name "Optical materials"@en ;
    .

<http://id.worldcat.org/fast/1139265> # Surfaces (Physics)
    a schema:Intangible ;
   schema:name "Surfaces (Physics)"@en ;
    .

<http://link.springer.com/10.1007/978-94-011-5008-8>
   rdfs:comment "from Springer" ;
   rdfs:comment "(Unlimited Concurrent Users)" ;
    .

<http://viaf.org/viaf/161234927> # Evgeni Gusev
    a schema:Person ;
   schema:familyName "Gusev" ;
   schema:givenName "Evgeni" ;
   schema:name "Evgeni Gusev" ;
    .

<http://viaf.org/viaf/166056899> # Alexander Vul'
    a schema:Person ;
   schema:familyName "Vul'" ;
   schema:givenName "Alexander" ;
   schema:name "Alexander Vul'" ;
    .

<http://viaf.org/viaf/28584301> # Eric Garfunkel
    a schema:Person ;
   schema:familyName "Garfunkel" ;
   schema:givenName "Eric" ;
   schema:name "Eric Garfunkel" ;
    .

<http://worldcat.org/entity/work/data/41538090#CreativeWork/>
    a schema:CreativeWork ;
   schema:description "Printed edition:" ;
   schema:isSimilarTo <http://www.worldcat.org/oclc/840311043> ; # Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
    .

<http://worldcat.org/isbn/9780792350088>
    a schema:ProductModel ;
   schema:isbn "0792350081" ;
   schema:isbn "9780792350088" ;
    .

<http://worldcat.org/isbn/9789401150088>
    a schema:ProductModel ;
   schema:isbn "9401150087" ;
   schema:isbn "9789401150088" ;
    .


Content-negotiable representations

Close Window

Please sign in to WorldCat 

Don't have an account? You can easily create a free account.