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Fundamental research and development for improved crystalline silicon solar cells : final subcontract report, March 2002 - July 2006

Author: A Rohatgi; Georgia Institute of Technology.; National Renewable Energy Laboratory (U.S.)
Publisher: Golden, Colo. : National Renewable Energy Laboratory, [2007]
Series: NREL/SR, 520-42324.
Edition/Format:   eBook : Document : National government publication : English
Database:WorldCat
Summary:
This report summarizes the progress made by Georgia Tech in the 2002-2006 period toward high-efficiency, low-cost crystalline silicon solar cells. This program emphasize fundamental and applied research on commercial substrates and manufacturable technologies. A combination of material characterization, device modeling, technology development, and complete cell fabrication were used to accomplish the goals of this  Read more...
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Details

Material Type: Document, Government publication, National government publication, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: A Rohatgi; Georgia Institute of Technology.; National Renewable Energy Laboratory (U.S.)
OCLC Number: 183198076
Notes: Title from title screen (viewed on Mar. 20, 2008).
"November 2007."
Description: vi, 71 p. : digital, PDF file
Details: Mode of access: Internet from the National Renewable Energy Laboratory web site. Address as of 3/20/08: http://www.nrel.gov/docs/fy08osti/42324.pdf; current access available via PURL.; Full text available via Internet in .pdf format. Adobe Acrobat Reader required.
Series Title: NREL/SR, 520-42324.
Responsibility: A. Rohatgi, Georgia Institute of Technology.

Abstract:

This report summarizes the progress made by Georgia Tech in the 2002-2006 period toward high-efficiency, low-cost crystalline silicon solar cells. This program emphasize fundamental and applied research on commercial substrates and manufacturable technologies. A combination of material characterization, device modeling, technology development, and complete cell fabrication were used to accomplish the goals of this program. This report is divided into five sections that summarize our work on i) PECVD SiN-induced defect passivation (Sections 1 and 2); ii) the effect of material inhomogeneity on the performance of mc-Si solar cells (Section 3); iii) a comparison of light-induced degradation in commercially grown Ga- and B-doped Czochralski Si ingots (Section 4); and iv) the understanding of the formation of high-quality thick-film Ag contacts on high sheet-resistance emitters (Section 5).

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