skip to content
Fundamentals of silicon carbide technology : growth, characterization, devices and applications Preview this item
ClosePreview this item
Checking...

Fundamentals of silicon carbide technology : growth, characterization, devices and applications

Author: Tsunenobu Kimoto; James A Cooper
Publisher: Singapore : Wiley, [2014]
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
"Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial  Read more...
Rating:

(not yet rated) 0 with reviews - Be the first.

Subjects
More like this

 

Find a copy online

Find a copy in the library

&AllPage.SpinnerRetrieving; Finding libraries that hold this item...

Details

Genre/Form: Electronic books
Additional Physical Format: Print version:
Kimoto, Tsunenobu, 1963-
Fundamentals of silicon carbide technology.
Singapore : John Wiley & Sons Singapore Pte. Ltd., [2014]
(DLC) 2014016546
(OCoLC)881406991
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Tsunenobu Kimoto; James A Cooper
ISBN: 9781118313558 1118313550 9781118313541 1118313542 9781118313534 1118313534
OCLC Number: 881418299
Description: 1 online resource (xiv, 538 pages) : illustrations
Contents: ""Title Page""; ""Copyright""; ""About the Authors""; ""Preface""; ""Chapter 1: Introduction""; ""1.1 Progress in Electronics""; ""1.2 Features and Brief History of Silicon Carbide""; ""1.3 Outline of This Book""; ""References""; ""Chapter 2: Physical Properties of Silicon Carbide""; ""2.1 Crystal Structure""; ""2.2 Electrical and Optical Properties""; ""2.3 Thermal and Mechanical Properties""; ""2.4 Summary""; ""References""; ""Chapter 3: Bulk Growth of Silicon Carbide""; ""3.1 Sublimation Growth""; ""3.2 Polytype Control in Sublimation Growth"" ""3.3 Defect Evolution and Reduction in Sublimation Growth""""3.4 Doping Control in Sublimation Growth""; ""3.5 High- Temperature Chemical Vapor Deposition""; ""3.6 Solution Growth""; ""3.7 3C-SiC Wafers Grown by Chemical Vapor Deposition""; ""3.8 Wafering and Polishing""; ""3.9 Summary""; ""References""; ""Chapter 4: Epitaxial Growth of Silicon Carbide""; ""4.1 Fundamentals of SiC Homoepitaxy""; ""4.2 Doping Control in SiC CVD""; ""4.3 Defects in SiC Epitaxial Layers""; ""4.4 Fast Homoepitaxy of SiC""; ""4.5 SiC Homoepitaxy on Non-standard Planes"" ""4.6 SiC Homoepitaxy by Other Techniques""""4.7 Heteroepitaxy of 3C-SiC""; ""4.8 Summary""; ""References""; ""Chapter 5: Characterization Techniques and Defects in Silicon Carbide""; ""5.1 Characterization Techniques""; ""5.2 Extended Defects in SiC""; ""5.3 Point Defects in SiC""; ""5.4 Summary""; ""References""; ""Chapter 6: Device Processing of Silicon Carbide""; ""6.1 Ion Implantation""; ""6.2 Etching""; ""6.3 Oxidation and Oxide/SiC Interface Characteristics""; ""6.4 Metallization""; ""6.5 Summary""; ""References""; ""Chapter 7: Unipolar and Bipolar Power Diodes"" ""7.1 Introduction to SiC Power Switching Devices""""7.2 Schottky Barrier Diodes (SBDs)""; ""7.3 pn and pin Junction Diodes""; ""7.4 Junction-Barrier Schottky (JBS) and Merged pin-Schottky (MPS) Diodes""; ""References""; ""Chapter 8: Unipolar Power Switching Devices""; ""8.1 Junction Field-Effect Transistors (JFETs)""; ""8.2 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)""; ""References""; ""Chapter 9: Bipolar Power Switching Devices""; ""9.1 Bipolar Junction Transistors (BJTs)""; ""9.2 Insulated-Gate Bipolar Transistors (IGBTs)""; ""9.3 Thyristors""; ""References"" ""Chapter 10: Optimization and Comparison of Power Devices""""10.1 Blocking Voltage and Edge Terminations for SiC Power Devices""; ""10.2 Optimum Design of Unipolar Drift Regions""; ""10.3 Comparison of Device Performance""; ""References""; ""Chapter 11: Applications of Silicon Carbide Devices in Power Systems""; ""11.1 Introduction to Power Electronic Systems""; ""11.2 Basic Power Converter Circuits""; ""11.3 Power Electronics for Motor Drives""; ""11.4 Power Electronics for Renewable Energy""; ""11.5 Power Electronics for Switch-Mode Power Supplies""
Other Titles: Fundamentals of SiC technology
Responsibility: Tsunenobu Kimoto, James A. Cooper.
More information:

Abstract:

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC  Read more...

Reviews

Editorial reviews

Publisher Synopsis

Students or working professionals interested in SiC technology will find this book worth reading. (IEEE Electrical Insulation Magazine, 1 November 2015) If you have any interest in the now emerging Read more...

 
User-contributed reviews
Retrieving GoodReads reviews...
Retrieving DOGObooks reviews...

Tags

Be the first.
Confirm this request

You may have already requested this item. Please select Ok if you would like to proceed with this request anyway.

Linked Data


Primary Entity

<http://www.worldcat.org/oclc/881418299> # Fundamentals of silicon carbide technology : growth, characterization, devices and applications
    a schema:MediaObject, schema:Book, schema:CreativeWork ;
    library:oclcnum "881418299" ;
    library:placeOfPublication <http://id.loc.gov/vocabulary/countries/si> ;
    schema:about <http://experiment.worldcat.org/entity/work/data/1885691682#Topic/integrated_circuits> ; # Integrated circuits
    schema:about <http://dewey.info/class/621.38152/e23/> ;
    schema:about <http://experiment.worldcat.org/entity/work/data/1885691682#Topic/semiconductors> ; # Semiconductors
    schema:about <http://experiment.worldcat.org/entity/work/data/1885691682#Topic/technology_&_engineering_mechanical> ; # TECHNOLOGY & ENGINEERING--Mechanical
    schema:about <http://experiment.worldcat.org/entity/work/data/1885691682#Topic/silicon_carbide> ; # Silicon carbide
    schema:alternateName "Fundamentals of SiC technology" ;
    schema:bookFormat schema:EBook ;
    schema:contributor <http://experiment.worldcat.org/entity/work/data/1885691682#Person/cooper_james_a_1946> ; # James A. Cooper
    schema:creator <http://experiment.worldcat.org/entity/work/data/1885691682#Person/kimoto_tsunenobu_1963> ; # Tsunenobu Kimoto
    schema:datePublished "2014" ;
    schema:description ""Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field."--"@en ;
    schema:description """Title Page""; ""Copyright""; ""About the Authors""; ""Preface""; ""Chapter 1: Introduction""; ""1.1 Progress in Electronics""; ""1.2 Features and Brief History of Silicon Carbide""; ""1.3 Outline of This Book""; ""References""; ""Chapter 2: Physical Properties of Silicon Carbide""; ""2.1 Crystal Structure""; ""2.2 Electrical and Optical Properties""; ""2.3 Thermal and Mechanical Properties""; ""2.4 Summary""; ""References""; ""Chapter 3: Bulk Growth of Silicon Carbide""; ""3.1 Sublimation Growth""; ""3.2 Polytype Control in Sublimation Growth"""@en ;
    schema:exampleOfWork <http://worldcat.org/entity/work/id/1885691682> ;
    schema:genre "Electronic books"@en ;
    schema:inLanguage "en" ;
    schema:isSimilarTo <http://www.worldcat.org/oclc/881406991> ;
    schema:name "Fundamentals of silicon carbide technology : growth, characterization, devices and applications"@en ;
    schema:productID "881418299" ;
    schema:url <http://onlinelibrary.wiley.com/book/10.1002/9781118313534> ;
    schema:url <http://rbdigital.oneclickdigital.com> ;
    schema:url <http://ieeexplore.ieee.org/servlet/opac?bknumber=6928768> ;
    schema:url <http://www.books24x7.com/marc.asp?bookid=56301> ;
    schema:url <http://0-onlinelibrary.wiley.com.pugwash.lib.warwick.ac.uk/book/10.1002/9781118313534> ;
    schema:url <http://public.eblib.com/choice/publicfullrecord.aspx?p=4034073> ;
    schema:url <http://proquest.safaribooksonline.com/9781118313558> ;
    schema:url <http://catalogimages.wiley.com/images/db/jimages/9781118313527.jpg> ;
    schema:url <http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=855635> ;
    schema:url <http://site.ebrary.com/id/10941722> ;
    schema:url <http://proquest.tech.safaribooksonline.de/9781118313558> ;
    schema:url <http://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=6928768> ;
    schema:url <http://dx.doi.org/10.1002/9781118313534> ;
    schema:workExample <http://worldcat.org/isbn/9781118313558> ;
    schema:workExample <http://worldcat.org/isbn/9781118313541> ;
    schema:workExample <http://worldcat.org/isbn/9781118313534> ;
    wdrs:describedby <http://www.worldcat.org/title/-/oclc/881418299> ;
    .


Related Entities

<http://experiment.worldcat.org/entity/work/data/1885691682#Person/cooper_james_a_1946> # James A. Cooper
    a schema:Person ;
    schema:birthDate "1946" ;
    schema:familyName "Cooper" ;
    schema:givenName "James A." ;
    schema:name "James A. Cooper" ;
    .

<http://experiment.worldcat.org/entity/work/data/1885691682#Person/kimoto_tsunenobu_1963> # Tsunenobu Kimoto
    a schema:Person ;
    schema:birthDate "1963" ;
    schema:familyName "Kimoto" ;
    schema:givenName "Tsunenobu" ;
    schema:name "Tsunenobu Kimoto" ;
    .

<http://experiment.worldcat.org/entity/work/data/1885691682#Topic/integrated_circuits> # Integrated circuits
    a schema:Intangible ;
    schema:name "Integrated circuits"@en ;
    .

<http://experiment.worldcat.org/entity/work/data/1885691682#Topic/technology_&_engineering_mechanical> # TECHNOLOGY & ENGINEERING--Mechanical
    a schema:Intangible ;
    schema:name "TECHNOLOGY & ENGINEERING--Mechanical"@en ;
    .

<http://onlinelibrary.wiley.com/book/10.1002/9781118313534>
    rdfs:comment "URL des Erstveröffentlichers" ;
    .

<http://worldcat.org/isbn/9781118313534>
    a schema:ProductModel ;
    schema:isbn "1118313534" ;
    schema:isbn "9781118313534" ;
    .

<http://worldcat.org/isbn/9781118313541>
    a schema:ProductModel ;
    schema:isbn "1118313542" ;
    schema:isbn "9781118313541" ;
    .

<http://worldcat.org/isbn/9781118313558>
    a schema:ProductModel ;
    schema:isbn "1118313550" ;
    schema:isbn "9781118313558" ;
    .

<http://www.worldcat.org/oclc/881406991>
    a schema:CreativeWork ;
    rdfs:label "Fundamentals of silicon carbide technology." ;
    schema:description "Print version:" ;
    schema:isSimilarTo <http://www.worldcat.org/oclc/881418299> ; # Fundamentals of silicon carbide technology : growth, characterization, devices and applications
    .

<http://www.worldcat.org/title/-/oclc/881418299>
    a genont:InformationResource, genont:ContentTypeGenericResource ;
    schema:about <http://www.worldcat.org/oclc/881418299> ; # Fundamentals of silicon carbide technology : growth, characterization, devices and applications
    schema:dateModified "2018-01-05" ;
    void:inDataset <http://purl.oclc.org/dataset/WorldCat> ;
    .


Content-negotiable representations

Close Window

Please sign in to WorldCat 

Don't have an account? You can easily create a free account.