skip to content
GaAs on Si(111) with a layered structure GaSe buffer layer
ClosePreview this item
Checking...

GaAs on Si(111) with a layered structure GaSe buffer layer

Author: J E Palmer; T Saitoh; T Yodo; M Tamura
Publisher: Amsterdam, North-Holland Pub. Co.
Edition/Format: Article Article : English
Publication:Journal of crystal growth. 150, no. 1-4, (1995): 685
Database:ArticleFirst
Rating:

(not yet rated) 0 with reviews - Be the first.

 

&AllPage.SpinnerRetrieving;

Find a copy in the library

&AllPage.SpinnerRetrieving; Finding libraries that hold this item...

Details

Document Type: Article
All Authors / Contributors: J E Palmer; T Saitoh; T Yodo; M Tamura
ISSN:0022-0248
Language Note: English
Unique Identifier: 87643561
Awards:
Description: 6

Reviews

User-contributed reviews
Retrieving GoodReads reviews...
Retrieving DOGObooks reviews...

Tags

Be the first.
Confirm this request

You may have already requested this item. Please select Ok if you would like to proceed with this request anyway.

Linked Data


<http://www.worldcat.org/oclc/1604674>
library:oclcnum"1604674"
library:placeOfPublication
owl:sameAs<info:oclcnum/1604674>
rdf:typeschema:Article
schema:contributor
schema:contributor
schema:contributor
schema:creator
schema:datePublished"1995"
schema:exampleOfWork<http://worldcat.org/entity/work/id/71471150>
schema:inLanguage"en"
schema:isPartOf
schema:name"GaAs on Si(111) with a layered structure GaSe buffer layer"
schema:pageStart"685"
schema:publisher
schema:url

Content-negotiable representations

Close Window

Please sign in to WorldCat 

Don't have an account? You can easily create a free account.