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Gallium nitride (GaN) : physics, devices, and technology

Author: Farid Medjdoub; Krzytsztof Iniewski
Publisher: Boca Raton : CRC Press, 2015.
Series: Devices, circuits, and systems.
Edition/Format:   eBook : Document : EnglishView all editions and formats
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Genre/Form: Electronic books
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Farid Medjdoub; Krzytsztof Iniewski
ISBN: 9781482220049 1482220040
OCLC Number: 924714209
Description: 1 online resource.
Contents: Chapter 1. GaN high-voltage power devices / Joachim Würfl --
chapter 2. AlGaN/GaN High-electron-mobility transistors grown by ammonia source molecular beam epitaxy / Yvon Cordier --
chapter 3. Gallium nitride transistors on large-diameter Si(111) substrate / Subramaniam Arulkumaran and Geok Ing Ng --
chapter 4. GaN-HEMT scaling technologies for high-frequency radio frequency and mixed signal applications / Keisuke Shinohara --
chapter 5. Group III-nitride microwave monolithically integrated circuits / Rüdiger Quay --
chapter 6. GaN-based metal/insulator/semiconductor-type Schottky hydrogen sensors / Ching-Ting Lee, Hsin-Ying Lee, and Li-Ren Lou --
chapter 7. InGaN-based solar cells / Ezgi Dogmus and Farid Medjdoub --
chapter 8. III-nitride semiconductors : new infrared intersubband technologies / Mark Beeler and Eva Monroy --
chapter 9. Gallium nitride-based interband tunnel junctions / Siddharth Rajan, Sriram Krishnamoorthy, and Fatih Akyol --
chapter 10. Trapping and degradation mechanisms in GaN-based HEMTs / Matteo Meneghini, Gaudenzio Meneghesso, and Enrico Zanoni.
Series Title: Devices, circuits, and systems.
Responsibility: edited by Farid Medjdoub and Krzysztof Iniewski.

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