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GaP heteroepitaxy on Si(100) : benchmarking surface signals when growing GaP on Si in CVD ambients

Author: Henning Döscher
Publisher: Cham : Springer, [2013] ©2013
Series: Springer theses.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a  Read more...
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Henning Döscher
ISBN: 9783319028804 3319028804 3319028790 9783319028798
OCLC Number: 868922615
Description: 1 online resource (155 pages) : illustrations.
Contents: Introduction --
Experimental --
Si(100) surfaces in chemical vapor environments --
GaP(100) and InP(100) surfaces --
GaP growth on Si(100) and anti-phase disorder --
Conclusion.
Series Title: Springer theses.
Responsibility: by Henning Döscher.

Abstract:

This thesis offers a key contribution to improving optoelectronic devices and performance of photovoltaic materials. It reports almost lattice-matched growth of thin gallium phosphide films as a  Read more...

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