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Gate dielectrics and MOS ULSIs : principles, technologies, and applications

Author: Takashi Hori
Publisher: Berlin ; New York : Springer, ©1997.
Series: Springer series in electronics and photonics, v. 34.
Edition/Format:   Print book : EnglishView all editions and formats
Summary:
Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO[subscript 2] gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. Since the quality requirements are rather different between device applications, they are selected in  Read more...
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Additional Physical Format: Online version:
Hori, Takashi, 1956-
Gate dielectrics and MOS ULSIs.
Berlin ; New York : Springer, ©1997
(OCoLC)605504361
Online version:
Hori, Takashi, 1956-
Gate dielectrics and MOS ULSIs.
Berlin ; New York : Springer, ©1997
(OCoLC)608908769
Document Type: Book
All Authors / Contributors: Takashi Hori
ISBN: 3540631828 9783540631828
OCLC Number: 37277576
Description: xiv, 352 pages : illustrations ; 24 cm.
Contents: 1. Introduction --
2. MIS Structure --
3. MOS Field-Effect Transistor --
4. Thermally Grown Silicon Oxide --
5. Thermally Nitrided Oxides: for Flash Memories --
6. High-Dielectric Constant Films: for Passive Capacitance.
Series Title: Springer series in electronics and photonics, v. 34.
Responsibility: Takashi Hori.

Abstract:

This text focuses on dielectric films satisfying the superior quality gate dielectric even in large-scale integration. The information presented is with regard to nanometer-range ultrathin  Read more...

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