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Gate stack and silicide issues in silicon processing : symposium held April 25-27, 2000, San Francisco, California, U.S.A.

Author: L A Clevenger
Publisher: Warrendale, Pa. : Materials Research Society, ©2001.
Series: Materials Research Society symposia proceedings, v. 611.
Edition/Format:   Print book : Conference publication : EnglishView all editions and formats
Database:WorldCat
Summary:

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

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Genre/Form: Conference papers and proceedings
San Francisco (Calif., 2000)
Congresses
Material Type: Conference publication, Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: L A Clevenger
ISBN: 1558995196 9781558995192
OCLC Number: 45708210
Description: 1 volume (various pagings) : illustrations ; 24 cm.
Contents: Materials Research Society Symposium Proceedings --
High-k Materials --
The Structure of Plasma-Deposited and Annealed Pseudo-Binary ZrO[subscript 2]-SiO[subscript 2] Alloys / Gilbert Rayner, Jr., Robert Therrien, Gerald Lucovsky --
Physical and Electrical Properties of Yttrium Silicate Thin Films / James Joseph Chambers, Gregory N. Parsons --
Electrical Characteristics of TaO[subscript x]N[subscript y] for High-k MOS Gate Dielectric Applications / Kiju Im, Hyungsuk Jung, Sanghun Jeon, Dooyoung Yang, Hyunsang Hwang --
Novel Gate Insulators --
Ultrathin Gate Oxide Prepared by Nitridation In ND[subscript 3] For MOS Device Applications / Hyungshin Kwon, Hyunsang Hwang --
Amorphous Mixed TiO[subscript 2] And SiO[subscript 2] Films On Si(100) By Chemical Vapor Deposition / Ryan C. Smith, Charles J. Taylor, Jeffrey Roberts, Noel Hoilien, Stephen A. Campbell, Wayne L. Gladfelter --
Zr Oxide Based Gate Dielectrics With Equivalent SiO[subscript 2] Thickness Of Less Than 1.0 nm And Device Integration With Pt Gate Electrode / Yanjun Ma, Yoshi Ono --
Novel Gate Structures --
Molybdenum As A Gate Electrode For Deep Sub-Micron CMOS Technology / Pushkar Ranade, Yee-Chia Yeo, Qiang Lu, Hideki Takeuchi, Tsu-Jae King, Chenming Hu --
Structural And Chemical Characterization Of Tungsten Gate Stack For 1Gb DRAM / Oleg Gluschenkov, John Benedict, Larry Clevenger, Patrick DeHaven, Chet Dziobkowski, Johnathan Faltermeier, Chenting Lin, Irene McStay, Keith Wong --
Advanced Gate Dielectrics.
Series Title: Materials Research Society symposia proceedings, v. 611.
Responsibility: editors L.A. Clevenger [and others].
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