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The growth and properties of silicon oxide and oxynitride gate dielectric
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The growth and properties of silicon oxide and oxynitride gate dielectric

Author: Kenneth Alexander Ellis
Dissertation: Thesis (Ph. D.)--Cornell University, Aug., 1998.
Edition/Format:   Thesis/dissertation : Thesis/dissertation : Manuscript   Archival Material : EnglishView all editions and formats
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Additional Physical Format: Online version:
Ellis, Kenneth Alexander.
Growth and properties of silicon oxide and oxynitride gate dielectric.
c1998
(OCoLC)692145116
Material Type: Thesis/dissertation, Manuscript
Document Type: Book, Archival Material
All Authors / Contributors: Kenneth Alexander Ellis
OCLC Number: 41903605
Description: xvi, 288 leaves : ill. ; 29 cm.
Responsibility: by Kenneth Alexander Ellis.

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