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Growth of 3C-SiC on (111)Si using hot-wall chemical vapor deposition

Author: Christopher Locke
Publisher: [Tampa, Fla] : University of South Florida, 2009.
Dissertation: Thesis (M.S.E.S.)--University of South Florida, 2009.
Edition/Format:   Thesis/dissertation : Thesis/dissertation : English
Database:WorldCat
Summary:
The thickness of the films was assessed through Fourier Transform infrared (FTIR) spectroscopy, and confirmed (in the case of growth on poly-Si seed layers) by cross-section scanning electron microscopy (SEM). The SEM cross-sections were also used to investigate the 3C-SiC/oxide interface. The surface morphology of the films was inspected via Nomarsky interference optical microscopy, atomic force microscopy (AFM),  Read more...
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Material Type: Thesis/dissertation
Document Type: Book
All Authors / Contributors: Christopher Locke
OCLC Number: 606607714
Notes: Title from PDF of title page.
Document formatted into pages; contains 79 pages.
Details: Mode of access: World Wide Web.; System requirements: World Wide Web browser and PDF reader.
Responsibility: by Christopher Locke.

Abstract:

The thickness of the films was assessed through Fourier Transform infrared (FTIR) spectroscopy, and confirmed (in the case of growth on poly-Si seed layers) by cross-section scanning electron microscopy (SEM). The SEM cross-sections were also used to investigate the 3C-SiC/oxide interface. The surface morphology of the films was inspected via Nomarsky interference optical microscopy, atomic force microscopy (AFM), and SEM. The crystalline quality of the films was determined through X-ray diffraction (XRD).

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<http://www.worldcat.org/oclc/606607714>
library:oclcnum"606607714"
library:placeOfPublication
library:placeOfPublication
owl:sameAs<info:oclcnum/606607714>
rdf:typej.2:Thesis
rdf:typeschema:Book
schema:creator
schema:datePublished"2009"
schema:description"The thickness of the films was assessed through Fourier Transform infrared (FTIR) spectroscopy, and confirmed (in the case of growth on poly-Si seed layers) by cross-section scanning electron microscopy (SEM). The SEM cross-sections were also used to investigate the 3C-SiC/oxide interface. The surface morphology of the films was inspected via Nomarsky interference optical microscopy, atomic force microscopy (AFM), and SEM. The crystalline quality of the films was determined through X-ray diffraction (XRD)."
schema:exampleOfWork<http://worldcat.org/entity/work/id/475923494>
schema:inLanguage"en"
schema:name"Growth of 3C-SiC on (111)Si using hot-wall chemical vapor deposition"
schema:publisher
schema:url

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