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Growth of 3C-SiC on (111)Si using hot-wall chemical vapor deposition

Author: Christopher Locke
Publisher: [Tampa, Fla] : University of South Florida, 2009.
Dissertation: M.S.E.S. University of South Florida 2009
Edition/Format:   Thesis/dissertation : Thesis/dissertation   Computer File : English
Database:WorldCat
Summary:
The thickness of the films was assessed through Fourier Transform infrared (FTIR) spectroscopy, and confirmed (in the case of growth on poly-Si seed layers) by cross-section scanning electron microscopy (SEM). The SEM cross-sections were also used to investigate the 3C-SiC/oxide interface. The surface morphology of the films was inspected via Nomarsky interference optical microscopy, atomic force microscopy (AFM),  Read more...
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Material Type: Thesis/dissertation
Document Type: Book, Computer File
All Authors / Contributors: Christopher Locke
OCLC Number: 606607714
Notes: Title from PDF of title page.
Document formatted into pages; contains 79 pages.
Details: Mode of access: World Wide Web.; System requirements: World Wide Web browser and PDF reader.
Responsibility: by Christopher Locke.

Abstract:

The thickness of the films was assessed through Fourier Transform infrared (FTIR) spectroscopy, and confirmed (in the case of growth on poly-Si seed layers) by cross-section scanning electron microscopy (SEM). The SEM cross-sections were also used to investigate the 3C-SiC/oxide interface. The surface morphology of the films was inspected via Nomarsky interference optical microscopy, atomic force microscopy (AFM), and SEM. The crystalline quality of the films was determined through X-ray diffraction (XRD).

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Primary Entity

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    schema:about <http://experiment.worldcat.org/entity/work/data/475923494#Thing/silicon_carbide> ; # Silicon carbide
    schema:about <http://experiment.worldcat.org/entity/work/data/475923494#Thing/heteroepitaxy> ; # Heteroepitaxy
    schema:about <http://experiment.worldcat.org/entity/work/data/475923494#Thing/chemical_vapor_deposition> ; # Chemical vapor deposition
    schema:about <http://experiment.worldcat.org/entity/work/data/475923494#Thing/crystal_defects> ; # Crystal defects
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    schema:creator <http://experiment.worldcat.org/entity/work/data/475923494#Person/locke_christopher> ; # Christopher Locke
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    schema:description "The thickness of the films was assessed through Fourier Transform infrared (FTIR) spectroscopy, and confirmed (in the case of growth on poly-Si seed layers) by cross-section scanning electron microscopy (SEM). The SEM cross-sections were also used to investigate the 3C-SiC/oxide interface. The surface morphology of the films was inspected via Nomarsky interference optical microscopy, atomic force microscopy (AFM), and SEM. The crystalline quality of the films was determined through X-ray diffraction (XRD)." ;
    schema:description "ABSTRACT: The heteroepitaxial growth of cubic silicon carbide (3C-SiC) on (111) silicon (Si) substrates, via a horizontal hot-wall chemical vapor deposition (CVD) reactor, has been achieved. Growth was conducted using a two step process: first the Si substrate surface is converted to SiC via a carbonization process and second the growth of 3C-SiC is performed on the initial carbonized layer. During carbonization, the surface of the Si is converted to 3C-SiC, which helps to minimize the stress in the growing crystal. Propane (C₃H₈) and silane (SiH₄), diluted in hydrogen (H₂), were used as the carbon and silicon source, respectively. A deposition rate of approximately 10 μm/h was established during the initial process at a temperature of ~1380 °C. The optimized process produced films with X-ray rocking curve full-width at half-maximum (FWHM) values of 219 arcsec, which is significantly better than any other published results in the literature. Once this process was developed a lower temperature process was developed at a slower growth rate of ~2 μm/h at 1225 °C. The crystal quality was inferior at the reduced temperature but this new process allows for the growth of 3C-SiC(111) films on oxide release layers for MEMS applications. In addition, for electronic device applications, a lower temperature process reduces the generation of defects caused by the nearly 8 % mismatch in the coefficient of thermal expansion (CTE) between 3C-SiC and Si. Finally a new process using a poly-Si seed layer deposited on an oxide-coated Si wafer was used to form 3C-SiC films for MEMS applications. The results indicated initially that the films may even be monocrystalline (based on X-ray evaluation) but later analysis performed using TEM indicated they were highly-ordered polycrystalline films. The grown 3C-SiC films were analyzed using a variety of characterization techniques. The thickness of the films was assessed through Fourier Transform infrared (FTIR) spectroscopy, and confirmed (in the case of growth on poly-Si seed layers) by cross-section scanning electron microscopy (SEM). The SEM cross-sections were also used to investigate the 3C-SiC/oxide interface. The surface morphology of the films was inspected via Nomarsky interference optical microscopy, atomic force microscopy (AFM), and SEM. The crystalline quality of the films was determined through X-ray diffraction (XRD)." ;
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    schema:publisher <http://experiment.worldcat.org/entity/work/data/475923494#Agent/university_of_south_florida> ; # University of South Florida
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