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High and low threshold P-channel metal oxide semiconductor process and description of microelectronics facility

Author: David L Bouldin; George C. Marshall Space Flight Center.; United States. National Aeronautics and Space Administration.
Publisher: Washington : U.S. National Aeronautics and Space Administration ; Springfield, Va. : For sale by the National Technical Information Service, 1976.
Series: United States.; National Aeronautics and Space Administration.; NASA contractor report
Edition/Format:   Print book : National government publication : EnglishView all editions and formats
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Additional Physical Format: Online version:
High and low threshold P-channel metal oxide semiconductor process and description of microelectronics facility.
Washington : U.S. National Aeronautics and Space Administration ; Springfield, Va. : For sale by the National Technical Information Service, 1976
(OCoLC)760888091
Material Type: Government publication, National government publication
Document Type: Book
All Authors / Contributors: David L Bouldin; George C. Marshall Space Flight Center.; United States. National Aeronautics and Space Administration.
OCLC Number: 2455983
Notes: Cover title.
Description: x, 35 pages : illustrations ; 27 cm.
Series Title: United States.; National Aeronautics and Space Administration.; NASA contractor report
Responsibility: David L. Bouldin [and others] ; George C. Marshall Space Flight Center.

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