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High frequency MOSFET gate drivers : technologies and applications

Author: Zhiliang Zhang; Yan-Fei Liu
Publisher: London : The Institution of Engineering and Technology, 2017.
Series: Materials, circuits and devices series, 33.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices.
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Zhang, ZhiLiang.
High frequency MOSFET gate drivers.
London : The Institution of Engineering and Technology, 2017
(OCoLC)1015829191
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Zhiliang Zhang; Yan-Fei Liu
ISBN: 9781785613661 1785613669
OCLC Number: 1009268182
Description: 1 online resource (xv, 279 pages).
Contents: "Contents"; "Authors"; biographies"; "Preface"; "List of symbols"; "1. Introduction"; "1.1 Introduction"; "1.2 Voltage regulator applications"; "1.3 Voltage source gate driver and high-frequency-dependent loss"; "1.3.1 Switching loss"; "1.3.2 Body diode conduction loss"; "1.3.3 Reverse recovery loss"; "1.3.4 Gate drive loss"; "1.4 Summary"; "References"; "2. Fundamentals of current source driver"; "2.1 Resonant gate drivers"; "2.2 Concept of current source driver"; "2.3 A practical and accurate switching loss model"; "2.3.1 Introduction." "2.3.2 Impact of parasitic inductance and load current"; "2.3.3 Proposed switching loss model"; "2.3.4 Turn-on switching loss model"; "2.3.5 Turn-off switching loss model"; "2.3.6 Voltage source drive model verification"; "2.3.7 Experimental validation of the voltage source drive model"; "2.4 Summary"; "References"; "3. Continuous current source driver"; "3.1 Two-channel low-side continuous current source drivers"; "3.1.1 Operating principle"; "3.1.2 Loss comparison"; "3.1.3 Advantages of the proposed current source driver"; "3.1.4 Applications." "3.1.5 Experimental results"; "3.2 High-side and low-side continuous current source drivers"; "3.2.1 Operating principle of proposed current source drivers"; "3.2.2 Advantages""; ""3.2.3 Loss analysis"; "3.2.4 Experimental results"; "3.3 Accurate switching loss model with current source drivers"; "3.3.1 Proposed MOSFET loss model with current source resonant driver"; "3.3.2 Analytical modeling and simulation results"; "3.3.3 Proposed optimal design with the accurate switching loss model"; "3.3.4 Experimental verification and discussion." "3.4 High-side and low-side current source drivers"; "3.4.1 Problem of high-side and low-side current source drivers"; "3.4.2 Proposed decoupled high-side and low-side current source drivers"; "3.4.3 New current-source gate driver with integrated magnetics"; "3.4.4 Experimental results and discussion"; "3.5 Summary"; "References"; "4. Discontinuous current source drivers"; "4.1 Discontinuous current source driver"; "4.1.1 Proposed low-side discontinuous CSD"; "4.1.2 Driver loss analysis"; "4.1.3 CSD design procedure"; "4.1.4 Design example." "4.1.5 Experimental results"; "4.2 High-side discontinuous CSD"; "4.2.1 Proposed CSD for synchronous buck converter and operation""; ""4.2.2 Design example""; ""4.2.3 Experimental results""; "4.3 Discontinuous CSD with reduced inductance"; "4.3.1 Proposed CSD and principle of operation"; "4.3.2 Proposed high-side CSD and hybrid gate-drive scheme"; "4.3.3 Experimental results"; "4.4 Current diversion"; "4.4.1 Introduction"; "4.4.2 Proposed switching loss model considering current diversion"; "4.4.3 Experimental results and discussions"; "4.5 Summary"; "References." "5. Adaptive current source drivers."
Series Title: Materials, circuits and devices series, 33.
Responsibility: ZhiLiang Zhang and Yan-Fei Liu.

Abstract:

This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate  Read more...

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