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Hot carrier design considerations for MOS devices and circuits

Author: Cheng T Wang
Publisher: New York : Van Nostrand Reinhold, ©1992.
Edition/Format:   Print book : EnglishView all editions and formats
Database:WorldCat
Summary:

This guide covers practical design criteria and constraints for dealing with hot carrier effects on circuit and surface performance. It offers practical methods for dealing with reliability questions  Read more...

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Additional Physical Format: Online version:
Hot carrier design considerations for MOS devices and circuits.
New York : Van Nostrand Reinhold, ©1992
(OCoLC)645821606
Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: Cheng T Wang
ISBN: 0442001215 9780442001216
OCLC Number: 25025507
Description: xiii, 334 pages : illustrations ; 24 cm
Contents: 1 The Mechanisms of Hot Carrier Degradation.- 1.1 Introduction.- 1.2 Injection of Channel Hot Carriers in MOSFETs.- 1.3 Characterization Techniques.- 1.4 Charge Trapping and Dit-Generation Under Uniform Hot-Carrier Injection in MOSFETs.- 1.5 Charge Trapping and Dit-Generation Under Nonuniform Hot-Carrier Injection in MOSFETs.- 1.6 Conclusions.- 1.7 Acknowledgments.- References.- 2 Hot-Carrier Degradation Effects for DRAM Circuits.- 2.1 Introduction.- 2.2 Hot-Carrier Degradation in MOSFETs.- 2.3 Hot Carrier Impact on Circuit Operation.- 2.4 Circuit Hot-Electron Effect Simulation.- 2.5 ESD Latent Damage and Hot-Electron Reliability.- 2.6 Future Issues.- 2.7 Conclusions.- 2.8 Acknowledgments.- References.- 3 Hot Carrier Design Considerations in MOS Nonvolatile Memories.- 3.1 Introduction.- 3.2 Hot Carriers and EPROM.- 3.3 Hot Carriers and Flash Memory.- 3.4 Hot Carriers and Floating-Gate-Type EEPROMs.- 3.5 Hot Carriers and MNOS-Type EEPROMs.- 3.6 Conclusions.- 3.7 Acknowledgments.- References.- 4 Hot-Carrier Degradation During Dynamic Stress.- 4.1 The Problem of AC Hot-Carrier Degradation.- 4.2 Discussion of Transient Effects.- 4.3 Dynamic Degradation in Circuits.- 4.4 Conclusions.- References.- Appendices.- Appendix I On the Mathematical Formalism of the Hot-Carrier Currents in Semiconductor DevicesCheng T. Wang.- A1.1 Introduction.- A1.2 Mathematical Formalism.- A1.3 Conclusion.- References.- Appendix II Non-Local Field Effects on Carrier Transport in Ultra-Small-Size Devices Cheng T. Wang.- A2.1 Introduction.- A2.3 Drift Velocity as a Function of Distance.- A2.4 A Comparative Study of Field Effect on Drift Velocity.- A2.5 Conclusion.- A2.6 Acknowledgments.- References.
Responsibility: edited by Cheng T. Wang.

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