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Hot carrier phenomena in semiconductors at microwave frequencies.

Author: ESTHER M CONWELL; VERNON J FOWLER; JOSEPH ZUCKER; GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE N Y.
Publisher: Ft. Belvoir Defense Technical Information Center 15 AUG 1962.
Edition/Format:   Print book : EnglishView all editions and formats
Database:WorldCat
Summary:
The possibility of achieving amplification of microwaves by means of hot electrons in InSb with an applied magnetic field was investigated with the use of the simple model of the and structure. Preliminary results indicate the possibility of obtaining amplification of circularly polarized plane microwaves using a bulk semiconductor such as InSb with two carriers and steady axial magnetic and electric fields. Probe  Read more...
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Document Type: Book
All Authors / Contributors: ESTHER M CONWELL; VERNON J FOWLER; JOSEPH ZUCKER; GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE N Y.
OCLC Number: 227289091
Notes: Continuation of Contract DA-36-039-sc-87298.
Description: 1 page

Abstract:

The possibility of achieving amplification of microwaves by means of hot electrons in InSb with an applied magnetic field was investigated with the use of the simple model of the and structure. Preliminary results indicate the possibility of obtaining amplification of circularly polarized plane microwaves using a bulk semiconductor such as InSb with two carriers and steady axial magnetic and electric fields. Probe measurements were made to detect phonons emitted by hot electrons in adjacent field-free regions in n-type Ge. High levels of spurious voltage pickup masked any phonon-drag effect that may have been present. small-signal measurements of conductivity and dielectric constant at 69.25 kmc as functions of dc bias field were made on one InSb sample. Very strong field dependence was observed, and it appears that this material may be appicable to variable-reactance devices at submillimeter wavelengths. Largesignal experiments were also performed in which the InSb sample was made to function as a bolometer-type peak power detector at 69.25 kmc. A hot-carrier mixer was constructed which will be used to measure the extent to which the heating of the carriers follows the field at 24 kmc. (Author).

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