skip to content
Hot carrier phenomena in semiconductors at microwave frequencies. Preview this item
ClosePreview this item
Checking...

Hot carrier phenomena in semiconductors at microwave frequencies.

Author: ESTHER M CONWELL; VERNON J FOWLER; JOSEPH ZUCKER; GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE N Y.
Publisher: Ft. Belvoir Defense Technical Information Center 15 AUG 1962.
Edition/Format:   Book : EnglishView all editions and formats
Database:WorldCat
Summary:
The possibility of achieving amplification of microwaves by means of hot electrons in InSb with an applied magnetic field was investigated with the use of the simple model of the and structure. Preliminary results indicate the possibility of obtaining amplification of circularly polarized plane microwaves using a bulk semiconductor such as InSb with two carriers and steady axial magnetic and electric fields. Probe  Read more...
Rating:

(not yet rated) 0 with reviews - Be the first.

Subjects
More like this

 

Find a copy in the library

&AllPage.SpinnerRetrieving; Finding libraries that hold this item...

Details

Document Type: Book
All Authors / Contributors: ESTHER M CONWELL; VERNON J FOWLER; JOSEPH ZUCKER; GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE N Y.
OCLC Number: 227289091
Notes: Continuation of Contract DA-36-039-sc-87298.
Description: 1 page

Abstract:

The possibility of achieving amplification of microwaves by means of hot electrons in InSb with an applied magnetic field was investigated with the use of the simple model of the and structure. Preliminary results indicate the possibility of obtaining amplification of circularly polarized plane microwaves using a bulk semiconductor such as InSb with two carriers and steady axial magnetic and electric fields. Probe measurements were made to detect phonons emitted by hot electrons in adjacent field-free regions in n-type Ge. High levels of spurious voltage pickup masked any phonon-drag effect that may have been present. small-signal measurements of conductivity and dielectric constant at 69.25 kmc as functions of dc bias field were made on one InSb sample. Very strong field dependence was observed, and it appears that this material may be appicable to variable-reactance devices at submillimeter wavelengths. Largesignal experiments were also performed in which the InSb sample was made to function as a bolometer-type peak power detector at 69.25 kmc. A hot-carrier mixer was constructed which will be used to measure the extent to which the heating of the carriers follows the field at 24 kmc. (Author).

Reviews

User-contributed reviews
Retrieving GoodReads reviews...
Retrieving DOGObooks reviews...

Tags

Be the first.
Confirm this request

You may have already requested this item. Please select Ok if you would like to proceed with this request anyway.

Linked Data


<http://www.worldcat.org/oclc/227289091>
library:oclcnum"227289091"
library:placeOfPublication
library:placeOfPublication
owl:sameAs<info:oclcnum/227289091>
rdf:typeschema:Book
rdfs:seeAlso
schema:about
schema:about
schema:about
schema:about
schema:about
rdf:typeschema:Intangible
schema:name"Electrical conductivity."
schema:about
schema:about
rdf:typeschema:Intangible
schema:name"Dielectric properties."
schema:about
schema:about
schema:about
schema:about
schema:about
schema:about
schema:about
rdf:typeschema:Intangible
schema:name"Mathematical analysis."
schema:about
schema:about
schema:contributor
schema:contributor
schema:contributor
schema:contributor
rdf:typeschema:Organization
schema:name"GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE N Y."
schema:datePublished"1962"
schema:datePublished"15 AUG 1962"
schema:description"The possibility of achieving amplification of microwaves by means of hot electrons in InSb with an applied magnetic field was investigated with the use of the simple model of the and structure. Preliminary results indicate the possibility of obtaining amplification of circularly polarized plane microwaves using a bulk semiconductor such as InSb with two carriers and steady axial magnetic and electric fields. Probe measurements were made to detect phonons emitted by hot electrons in adjacent field-free regions in n-type Ge. High levels of spurious voltage pickup masked any phonon-drag effect that may have been present. small-signal measurements of conductivity and dielectric constant at 69.25 kmc as functions of dc bias field were made on one InSb sample. Very strong field dependence was observed, and it appears that this material may be appicable to variable-reactance devices at submillimeter wavelengths. Largesignal experiments were also performed in which the InSb sample was made to function as a bolometer-type peak power detector at 69.25 kmc. A hot-carrier mixer was constructed which will be used to measure the extent to which the heating of the carriers follows the field at 24 kmc. (Author)."
schema:exampleOfWork<http://worldcat.org/entity/work/id/137022337>
schema:inLanguage"en"
schema:name"Hot carrier phenomena in semiconductors at microwave frequencies."
schema:publisher
rdf:typeschema:Organization
schema:name"Defense Technical Information Center"

Content-negotiable representations

Close Window

Please sign in to WorldCat 

Don't have an account? You can easily create a free account.