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Hot-Carrier Reliability of MOS VLSI Circuits

Author: Yusuf Leblebici; Sung-Mo Kang
Publisher: Boston, MA : Springer US, 1993.
Series: Springer International Series in Engineering and Computer Science, VLSI, Computer Architecture and Digital Signal Processing, 227.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
This volume addresses the issues related to hot-carrier reliability of MOS VLSI circuits, ranging from device physics to circuit design guidelines. It presents a unified view of the physical mechanisms involved in hot-carrier induced device degradation, the prevalent models for these mechanisms, and simulation methods for estimating hot-carrier effects in the circuit environment. The newly emerging approaches to the  Read more...
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Yusuf Leblebici; Sung-Mo Kang
ISBN: 9781461532507 1461532507
OCLC Number: 851745862
Description: 1 online resource (xvii, 212 pages).
Contents: 1. Introduction --
1.1. The Concept of IC Reliability --
1.2. Design-for-Reliability --
1.3. VLSI Reliability Problems --
1.4. Gradual Degradation versus Catastrophic Failures --
1.5. Hot-Carrier Effects --
1.6. Overview of the Book --
References --
2. Oxide Degradation Mechanisms in Mos Transistors --
2.1. Introduction --
2.2. MOS Transistor: A Qualitative View --
2.3. The Nature of Gate Oxide Damage in MOSFETs --
2.4. Injection of Hot Carriers into Gate Oxide --
2.5. Oxide Traps and Charge Trapping --
2.6. Interface Trap Generation --
2.7. Bias Dependence of Degradation Mechanisms --
2.8. Degradation under Dynamic Operating Conditions --
2.9. Effects of Hot-Carrier Damage on Device Characteristics --
2.10. Hot-Carrier Induced Degradation of pMOS Transistors --
References --
3. Modeling of Degradation Mechanisms --
3.1. Preliminary Remarks --
3.2. Quasi-Elastic Scattering Current Model --
3.3. Charge (Electron) Trapping Model --
3.4. Impact Ionization Current Model --
3.5. Interface Trap Generation Model --
3.6. Trap Generation under Dynamic Operating Conditions --
References --
4. Modeling of Damaged Mosfets --
4.1. Introduction --
4.2. Representation of Hot-Carrier Induced Oxide Damage --
4.3. Two-Dimensional Modeling of Damaged MOSFETs --
4.4. Empirical One-Dimensional Modeling --
4.5. An Analytical Damaged MOSFET Model --
4.6. Consideration of Channel Velocity Limitations --
4.7. Pseudo Two-Dimensional Modeling of Damaged MOSFETs --
4.8. Table-Based Modeling Approaches --
References --
5. Transistor-Level Simulation for Circuit Reliability --
5.1. Introduction --
5.2. Review of Circuit Reliability Simulation Tools --
5.3. Circuit Reliability Simulation Using iSMILE: A Case Study --
5.4. Circuit Simulation Examples --
5.5. Evaluation of the Simulation Algorithm --
5.6. Identification of Critical Devices --
References --
6. Fast Timing Simulation for Circuit Reliability --
6.1. Introduction --
6.2. ILLIADS-R: A Fast Timing and Reliability Simulator --
6.3. Fast Dynamic Reliability Simulation --
6.4. Circuit Simulation Examples with ILLIADS-R --
6.5. iDSIM2: Hierarchical Circuit Reliability Simulation --
References --
7. Macromodeling of Hot-Carrier Induced Degradation in Mos Circuits --
7.1. Introduction --
7.2. Macromodel Development: Starting Assumptions --
7.3. Degradation Macromodel for CMOS Inverters --
7.4. Degradation Macromodel for nMOS Pass Gates --
7.5. Application of the Macromodel to Inverter Chain Circuits --
7.6. Application of the Macromodel to CMOS Logic Circuits --
References --
8. Circuit Design for Reliability --
8.1. Introduction --
8.2. Device-Level Measures --
8.3. Circuit-Level Measures --
8.4. Rule-Based Diagnosis of Circuit Reliability --
References.
Series Title: Springer International Series in Engineering and Computer Science, VLSI, Computer Architecture and Digital Signal Processing, 227.
Responsibility: by Yusuf Leblebici, Sung-Mo (Steve) Kang.

Abstract:

The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is  Read more...

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