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Hydrogenated amorphous silicon. Part C, Electronic and transport properties

Author: Jacques I Pankove
Publisher: Orlando, Fla : Academic Press, 1984.
Series: Semiconductors and semimetals, v. 21, pt. C
Edition/Format:   eBook : Document : EnglishView all editions and formats
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SEMICONDUCTORS & amp; SEMIMETALS V21C.
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Hydrogenated amorphous silicon. Part C, Electronic and transport properties.
Orlando, Fla : Academic Press, 1984
(OCoLC)17653733
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Jacques I Pankove
ISBN: 9780080864136 0080864139 0127521496 9780127521497
OCLC Number: 298462707
Description: 1 online resource (xiii, 437 pages) : illustrations.
Contents: Front Cover; Semiconductors and Semimetals; Copyright Page; Contents; List of Contributors; Foreword; Preface; Chapter 1. Introduction; References; Chapter 2. Density of States from Junction Measurements in Hydrogenated Amorphous Silicon; I. Introduction; II. General Considerations; III. Field Effect; IV. Capacitance; V. Deep-Level Transient Spectroscopy; References; Chapter 3. Magnetic Resonance Measurements in a-Si : H; I. Introduction; II. Nuclear Magnetic Resonance; III. Electron Spin Resonance; IV. Summary; References; Chapter 4. Optically Detected Magnetic Resonance; I. Introduction. II. Principle of Optically Detected Magnetic ResonanceIII. Experimental Apparatus; IV. Steady State ODMR; V. Light-Induced Effect in ODMR; VI. Nature of the Recombination Centers in a-Si: H; VII. Remark on Recombination Processes; VIII. Time-Resolved ODMR; IX. Temperature Dependence of ODMR; X. ENDOR and Optically Detected ENDOR; XI. Spin-Dependent Photoinduced Absorption; XII. Summary; References; Chapter 5. Carrier Mobility in a-Si : H; I. General Considerations; II. Experimental Method; III. Experimental Results; IV. Concluding Comments; References. Chapter 6. Information about Band-Tail States from Time-of-Flight ExperimentsI. Introduction; II. Time-of-Flight Experiment; III. Experimental Results; IV. Transport Model; V. Discussion; VI. Conclusions; Appendix; References; Chapter 7. Diffusion Length in Undoped a-Si : H; I. Introduction; II. Experimental Determination of Lp in Conventional Semiconductors; III. Estimates of Diffusion Length in Amorphous Silicon; IV. Theory of the Surface Photovoltage Method in a-Si: H; V. Relation of Measured LD to Lp; VI. Application of Diffusion Length Measurements in a-Si : H; VII. Conclusion. I. IntroductionII. Dark Conductivity Changes; III. Reversal of Light-Induced Changes; IV. Photoconductivity Changes; V. Changes in Photovoltaic Properties; VI. Discussion; References; Chapter 11. Schottky Barriers on a-Si : H; I. Introduction; II. Aspects of Schottky Bamers; III. Transport Mechanisms and Measurements; IV. Structural Interactions; V. Barrier on Doped a-Si : H; VI. Schottky-Barrier Origin; VII. Concluding Remarks; References; Chapter 12. Amorphous Semiconductor Superlattices; I. Introduction; II. Film Deposition and Structure; Ill. Optical Absorption; IV. Photoluminescence.
Series Title: Semiconductors and semimetals, v. 21, pt. C
Other Titles: Electronic and transport properties
Responsibility: volume editor, Jacques I. Pankove.

Abstract:

SEMICONDUCTORS & amp; SEMIMETALS V21C.

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