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III-nitride semiconductors and their modern devices

Author: B Gil
Publisher: Oxford : Oxford University Press, 2013. ©2013
Series: Series on semiconductor science and technology, 18.; Oxford science publications.
Edition/Format:   Print book : English : First editionView all editions and formats
Database:WorldCat
Summary:

All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.

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Material Type: Internet resource
Document Type: Book, Internet Resource
All Authors / Contributors: B Gil
ISBN: 9780199681723 0199681724
OCLC Number: 862238997
Description: xxi, 638 pages : illustrations ; 25 cm.
Contents: Development of the nitride-based UV/DUV LEDs / Hiroshi Amano --
The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diode arrays / Izabella Grzegory, Michal Bockowski, Piotr Perlin, Czeslaw Skierbiszewski, Tadeusz Sauski, Marcin Sarzynski, Stanislaw Krukowski, and Sylwester Porowski --
Epitaxial growth and benefits of GaN on silicon / Armin Dadgar and Alois Krost --
The growth of bulk aluminum nitride / Ronny Kirste and Zlatko Sitar --
Epitaxial growth of nitride quantum dots / Andre Strittmatter --
Properties of InAINlayers nearly lattice-matched to GaN and their use for photonics and electronics / Raphael Butte, Gatien Cosendey, Lorenzo Lugani, Marlene Glauser, Antonino Castiglia, Guillaume Perillat-Merceroz, Jean-Francois Carlin, and Nicolas Grandjean --
Growth and optical properties of aluminum-rich AlGaN heterostructures / Hideto Miyake --
Optical and structural properties of InGaN light-emitters on non-polar and semipolar GaN / Michael Kneissl and Tim Wernicke --
GaN-based single-nanowire devices / Rudeesun Songmuang and Eva Monroy --
Advanced photonic and nanophotonic devices / Jean-Yves Duboz --
Nitride-based electron devices for high-power / high-frequency applications / Yvon Cordier, Tatsuya Fujishima, Bin Lu, Elison Matioli, and Tomas Palacios --
Intersubband transitions in low-dimensional nitrides / Maria Tchernycheva and Francois H. Julien --
The slow light in gallium nitride / Tatiana V. Shubina, Mikhail M. Glazov, Nikolay A. Gippius and Bernard Gil --
Nitride devices and their buifunctionalization for biosensing applications / Walter R.L. Lambrecht and Atchara Punya --
Terahertz emission in polaritonic systems with nitrides / Oleksandr Kyriienko, Ivan A. Shelykh, and Alexey V. Kavokin.
Series Title: Series on semiconductor science and technology, 18.; Oxford science publications.
Other Titles: 3-nitride semiconductors and their modern devices
Three-nitride semiconductors and their modern devices
Responsibility: edited by Bernard Gil, Centre National de la Recherche Scientifique, Université de Montpellier 2.
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This book, written by a team of worldwide experts in the field, deals with nitride based materials in 16 chapters. It covers growth and material aspects of nitrides, nano-devices, photonics, advanced Read more...

 
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