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Introduction to magnetic random-access memory

Author: B Dieny; Ronald Barry Goldfarb; Kyung-Jin Lee
Publisher: Piscataway, NJ : IEEE Press, [2017]
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based  Read more...
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Genre/Form: Electronic books
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: B Dieny; Ronald Barry Goldfarb; Kyung-Jin Lee
ISBN: 9781119079415 1119079411 9781119079354 1119079357 9781119079446 1119079446
OCLC Number: 963932445
Description: 1 online resource.
Contents: Basic Spintronic Transport Phenomena / Nicolas Locatelli, Vincent Cros --
Magnetic Properties of Materials for MRAM / Shinji Yuasa --
Micromagnetism Applied to Magnetic Nanostructures / Liliana D Buda-Prejbeanu --
Magnetization Dynamics / William E Bailey --
Magnetic Random-Access Memory / Bernard Dieny, I Lucian Prejbeanu --
Magnetic Back-End Technology / Michael C Gaidis --
Beyond MRAM: Nonvolatile Logic-in-Memory VLSI / Takahiro Hanyu, Tetsuo Endoh, Shoji Ikeda, Tadahiko Sugibayashi, Naoki Kasai, Daisuke Suzuki, Masanori Natsui, Hiroki Koike, Hideo Ohno --
Appendix: Units for Magnetic Properties.
Responsibility: edited by Bernard Dieny, Ronald B. Goldfarb, Kyung-Jin Lee.

Abstract:

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in  Read more...

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