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Introduction to semiconductor device modelling

Author: Christopher M Snowden
Publisher: Singapore : World Scientific, ©1986.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor  Read more...
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Snowden, Christopher M.
Introduction to semiconductor device modelling.
Singapore : World Scientific, ©1986
(DLC) 87004984
(OCoLC)15109415
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Christopher M Snowden
ISBN: 9789814261531 981426153X
OCLC Number: 828146683
Description: 1 online resource (xv, 222 pages) : illustrations
Contents: Ch. 1. Introduction. 1.1. Modelling. 1.2. Historical development of physical device modelling --
ch. 2. Semiconductor carrier transport equations. 2.1. The Boltzmann model. 2.2. Maxwell's equations. 2.3. The classical semiconductor equations. 2.4. Boundary conditions. 2.5. Generation and recombination. 2.6. Thermal conductivity and heat flow --
ch. 3. Solution of the semiconductor equations closed-form analytical models. 3.1. Solution techniques for the semiconductor equations. 3.2 Closed-Form analysis of the semiconductor equations. 3.3. Limitations of closed-form analyses --
ch. 4. Numerical solution of the semiconductor equations the finite difference method. 4.1. Finite-difference schemes. 4.2. Discretization of the semiconductor equations. 4.3. Methods of solving finite-difference equations. 4.4. Boundary conditions. 4.5. Examples of finite-difference simulations --
ch. 5. Numerical solution of the semiconductor equations finite-element methods. 5.1. The finite-element method and its application to semiconductor device simulation. 5.2 Examples of simulations based on the finite-element method --
ch. 6. Semiclassical transport equations hot electron effects. 6.1. The Hydrodynamic semiclassical semiconductor equations. 6.2. Examples of hot electron modelling --
ch. 7. Simulation of heterojunction devices. 7.1. Semiconductor equations for heterojunctions. 7.2. High electron mobility transistors. 7.3. Heterojunction bipolar transistors. 7.4. Monte Carlo simulations --
ch. 8. The Monte Carlo method. 8.1. The Monte Carlo method applied to carrier transport in semiconductors. 8.2. Treatment of results. 8.3. Application of Monte Carlo simulations --
ch. 9. Quantum mechanical effects an introduction to quantum transport theory. 9.1. Extension of semiclassical transport concepts to quantum structures. 9.2. Quantum transport theory.
Responsibility: Christopher M. Snowden.

Abstract:

This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.

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