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Introduction to VLSI Silicon Devices : Physics, Technology and Characterization

Author: Badih El-Kareh; Richard J Bombard
Publisher: Boston, MA : Springer US, 1986.
Series: Kluwer international series in engineering and computer science., VLSI, computer architecture, and digital signal processing ;, 10.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Database:WorldCat
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Badih El-Kareh; Richard J Bombard
ISBN: 9781461322757 1461322758
OCLC Number: 852789313
Description: 1 online resource (592 pages).
Contents: 1. Resistances and Their Measurements --
1.0 Introduction --
1.1 Resistance --
1.2 Resistivity --
1.3 Current Density --
1.4 Electric Field, Mobility, Conductivity and Resistivity --
1.5 Carrier Concentrations --
1.6 Sheet Resistance and Techniques for its Evaluation --
1.7 Line Width and Mask Alignments --
1.8 The Spreading Resistance Technique --
Summary of Important Equations --
References --
2. PN Junctions --
2.0 Introduction --
2.1 Description of PN Junction --
2.2 Fabrication of A PN Junction --
2.3 Characteristics of the PN Junction at Thermal Equilibrium --
2.4 Forward Biased PN Junction --
2.5 Reverse Biased PN Junction --
Summary of Important Equations --
References --
3. The Bipolar Transistor --
3.0 Introduction --
3.1 Transistor Action --
3.2 A Typical Bipolar Process Sequence --
3.3 Injection Parameters, Wide Base Region --
3.4 Injection Parameters, Narrow Base Region --
3.5 The Schottky Barrier Diode --
3.6 Maximum Transistor Voltage Limitations --
3.7 High-Current Transistor Characteristics --
3.8 High-Frequency and Switching Behavior --
Summary of Important Equations --
References --
4. The MIS CV Technique --
4.0 Introduction --
4.1 The Insulator Capacitance --
4.2 The Ideal MOS System --
4.3 Description and Analysis of an Ideal Cv-Curve --
4.4 The Real MIS Structure --
4.5 Methods to Evaluate CV-Plots --
Summary of Important Equations --
References --
5. Surface Effects on PN Junctions --
5.0 Introduction --
5.1 Ideal Structure without Applied Bias --
5.2 Ideal Structure with Applied Bias on the Gate --
5.3 Effect of Insulator Charge and Work-Function Difference --
5.4 Body-Effect or Substrate Bias Sensitivity --
5.5 Reverse Current --
5.6 Effect of Gate Bias on the Junction Breakdown Voltage --
5.7 Injection of Hot Carriers into the Insulator --
5.8 Surface Effects on the Junction Forward Characteristics --
Summary of Important Equations --
References --
6. Insulated-Gate-Field-Effect-Transistor (IGFET) --
6.0 Introduction --
6.1 Principle of Operation --
6.2 Fabrication Techniques --
6.3 Current-Voltage Characteristics, Long and Wide Channel, Uniform Substrate --
6.4 Non-Uniform Substrate Profile --
6.5 Second-Order Effects, Device Limits and Design Considerations --
6.6 Types of IGFETs and Applications --
6.7 CMOS --
Summary of Important Equations --
References --
Universal Physical Constants --
Conversion Factors --
The Greek Alphabet.
Series Title: Kluwer international series in engineering and computer science., VLSI, computer architecture, and digital signal processing ;, 10.
Responsibility: by Badih El-Kareh, Richard J. Bombard.
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