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Low power and reliable SRAM memory cell and array design

Author: Koichiro Ishibashi; Kenichi Osada
Publisher: Berlin ; New York : Springer, ©2011.
Series: Springer series in advanced microelectronics, 31.
Edition/Format:   Print book : EnglishView all editions and formats
Summary:
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
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Document Type: Book
All Authors / Contributors: Koichiro Ishibashi; Kenichi Osada
ISBN: 9783642195679 3642195679
OCLC Number: 773622403
Description: xi, 143 pages : illustrations (some color) ; 24 cm.
Contents: Preface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future Technologies
Series Title: Springer series in advanced microelectronics, 31.
Responsibility: Koichiro Ishibashi, Kenichi Osada, editors.

Abstract:

The recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS  Read more...

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