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Low substrate temperature modeling outlook of scaled n-MOSFET

Author: Nabil Shovon Ashraf
Publisher: [San Rafael, California] : Morgan & Claypool Publishers, [2018] ©2018
Series: Synthesis lectures on emerging engineering technologies, #10.
Edition/Format:   eBook : Document : EnglishView all editions and formats
Summary:
Low substrate/lattice temperature (< 300 K) operation of n-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an e-book [1] in this area where he and his co-authors performed original simulation and modeling work on MOSFET threshold voltage and demonstrated that through efficient  Read more...
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Genre/Form: Electronic books
Additional Physical Format: Print version:
Material Type: Document, Internet resource
Document Type: Internet Resource, Computer File
All Authors / Contributors: Nabil Shovon Ashraf
ISBN: 9781681733869 1681733862
OCLC Number: 1047603338
Description: 1 online resource (xi, 77 pages) : illustrations.
Contents: 1. Introduction --
2. Historical perspectives of scaled MOSFET evolution --
3. Simulation results of on-state drain current and subthreshold drain current at substrate temperatures below 300 K --
3.1 Modeling equations to derive on-state drain current as a function of drain voltage for different gate voltages operated at reduced substrate temperatures below 300 K --
3.1.1 Modeling of substrate or bulk mobility as a function of substrate temperature for 1 [mu]m channel length MOSFET --
3.1.2 Modeling of drain current as a function of drain voltage for different gate voltage biases at different substrate temperatures --
3.1.3 Modeling of drain current as a function of substrate temperatures for different gate voltage and drain biases conditions for a long-channel n-MOSFET --
3.2 Drain current as a function of gate voltage for a fixed low-drain voltage at different substrate temperatures for the 1 [mu]m channel length n-MOSFET [mu]m --
4. Simulation results on substrate mobility and on-channel mobility of conventional long-channel n-MOSFET at substrate temperatures 300 K and below --
4.1 Electron mobility in p-type substrate of silicon varying with substrate acceptor doping concentrations for different substrate temperatures --
4.2 Simulation results of electron carrier mobility at the surface of an n-channel MOSFET for different substrate temperatures --
4.2.1 Modeling equations for extraction of surface mobility as a function of vertical effective field --
5. Simulation outcomes of subthreshold slope factor or coefficient for different substrate temperatures at the vicinity of a subthreshold region to deep subthreshold region of a long-channel n-MOSFET --
6. Review of scaled device architectures for their feasibility to low temperature operation simulation perspectives of the author's current research --
6.1 Silicon nanowire transistor performance analysis with consideration of low-temperature operation --
6.2 Negative capacitance ferroelectric Fet (Ncfet) performance analysis with consideration of low-temperature operation --
7. Summary of research results and conclusions --
References --
Author's biography.
Series Title: Synthesis lectures on emerging engineering technologies, #10.
Responsibility: Nabil Shovon Ashraf.

Abstract:

Explores device parameters such as channel inversion carrier mobility and its characteristic evolution. This book is the first to illustrate that a single subthreshold slope value is erroneous and at  Read more...

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