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Materials, properties and preparation/ A Handbook on semiconductors. 3,A.

Publisher: Amsterdam : North-Holland, 1994.
Series: Handbook on semiconductors, 3A : Materials, properties and preparation
Edition/Format:   Print book : English : Completely rev. and enlarged edView all editions and formats

A variety of interdisciplinary studies have been carried out that have resulted in a number of sophisticated techniques to evaluate semiconductors. This volume discusses scientific issues relevant to  Read more...


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Document Type: Book
ISBN: 0444888357 9780444888358
OCLC Number: 311911148
Description: XV, 1230 S Ill., graph. Darst
Contents: 1. Growth and evaluation of bulk crystals (J.-I. Chikawa and J. Matui). 2. Mechanical behaviour of semiconductors (K. Sumino). 3. MOCVD technology and its applications (M. Razeghi). 4. Growth mechanisms in MBE and CBE of III-V compounds (B.A. Joyce, D.D. Vvedensky, C.T. Foxon). 5. Growth of narrow bandgap semiconductors (D.L. Partin, J. Heremans). 6. Growth, characterization and device developments in large bandgap semiconductor thin films (R.F. Davis). 7. HgTe-CdTe superlattices (J.R. Meyer et al.). 8. Si/Ge and Si/SiGe heterostructures and superlattices (K. Eberl, W. Wegscheider). 9. Amorphous semiconductors (M. Stutzmann). 10. Characterization and properties of semiconductors (G.E. Stillman et al.). 11. Characterization of compound semiconductors by etching (J.L. Weyhes). 12. X-ray topography (P. Franzosi). 13. Evaluation of semiconductors using scanning microscopy (C.A. Warwick). 14. High resolution electron microscopy for semiconducting materials (J. Van Landuyt, J. Vanhellemont). 15. Dislocations in heteroepitaxial films (R. Beanland, C.J. Kiely, R. C. Pond). 16. Diffusion in semiconductors (A.F.W. Willoughby). 17. (Diluted) magnetic semiconductors (T. Dietl). 18. Impurity- and defect-centers in compound semiconductors (M. Skowronski). 19. Atomic ordering and phase separation in epitaxial III-V alloys (A. Zunger, S. Mahajan). 20. Hydrogen in crystalline semiconductors (E.E. Haller). 21. Carbon in mono-crystalline silicon (G. Davies, R.C. Newman). 22. Oxygen in silicon (H. Bender, J. Vanhellemont). 23. Chalcogen-related defects in silicon (H.G. Grimmeiss, E. Janzen). 24. Silicon crystals for giga-bit scale integration (T. Abe). 25. Epitaxial silicides (R.T. Tung). 26. Metal-compound semiconductor interactions (T. Sands, V.G. Keramidas). 27. Ion implantation of silicon and gallium arsenide (J.P. de Souza, D.K. Sadana). 28. Passivation and dielectrics (K.V. Srikrishnan, G.E. Schwartz).
Series Title: Handbook on semiconductors, 3A : Materials, properties and preparation
Responsibility: vol. ed.: S. Mahajan.
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